LEADER 00732nam0-2200265 --450 001 9910560299303321 005 20220503142336.0 010 $a9781780689067 100 $a20220503d2020----kmuy0itay5050 ba 101 0 $aeng 102 $aGB 105 $ay 001yy 200 1 $aProcedural autonomy across Europe$fedited by Bart Krans, Anna Nylund 210 $aCambridge$cIntersentia$dc2020 215 $aXX, 246 p.$d24 cm 676 $a347.2405$v23$zita 702 1$aKrans,$bBart 702 1$aNylund,$bAnna 801 0$aIT$bUNINA$gREICAT$2UNIMARC 901 $aBK 912 $a9910560299303321 952 $aIX C 201$b2020/550$fFGBC 959 $aFGBC 996 $aProcedural autonomy across Europe$92833658 997 $aUNINA LEADER 01711oam 2200409 a 450 001 9910698545703321 005 20080909163229.0 035 $a(CKB)4330000001762240 035 $a(OCoLC)61850924 035 $a(EXLCZ)994330000001762240 100 $a20051006d2005 ua 0 101 0 $aeng 135 $aurmn||||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aAnalysis of ground-water levels and associated trends in Yucca Flat, Nevada Test Site, Nye County, Nevada, 1951-2003$b[electronic resource] /$fby Joseph M. Fenelon ; prepared in cooperation with the Nevada Operations Office of the U.S. Department of Energy, under Interagency Agreement, DE-AI52-01NV13944 210 1$aCarson City, Nev. :$cU.S. Dept. ot the Interior, U.S. Geological Survey,$d2005. 215 $avi, 87 pages $cdigital, PDF file 225 1 $aScientific investigations report ;$v2005-5175 300 $aTitle from PDF title screen (viewed on Oct. 6, 2005). 320 $aIncludes bibliographical references (pages 55-57). 606 $aWater table$zNevada$zNevada Test Site 606 $aGroundwater$xQuality$zNevada$zNevada Test Site$vDatabases 615 0$aWater table 615 0$aGroundwater$xQuality 700 $aFenelon$b Joseph M$01387247 712 02$aGeological Survey (U.S.) 712 02$aUnited States.$bDepartment of Energy.$bNevada Operations Office. 801 0$bGIS 801 1$bGIS 801 2$bGIS 801 2$bGPO 906 $aBOOK 912 $a9910698545703321 996 $aAnalysis of ground-water levels and associated trends in Yucca Flat, Nevada Test Site, Nye County, Nevada, 1951-2003$93518811 997 $aUNINA LEADER 04773nam 22007575 450 001 9910634053103321 005 20200630055043.0 010 $a3-540-45163-3 024 7 $a10.1007/b12953 035 $a(CKB)1000000000233138 035 $a(SSID)ssj0000323112 035 $a(PQKBManifestationID)11242971 035 $a(PQKBTitleCode)TC0000323112 035 $a(PQKBWorkID)10305733 035 $a(PQKB)10203801 035 $a(DE-He213)978-3-540-45163-1 035 $a(PPN)15517505X 035 $a(EXLCZ)991000000000233138 100 $a20100729d2004 u| 0 101 0 $aeng 135 $aurnn|008mamaa 181 $ctxt 182 $cc 183 $acr 200 10$aFerroelectric Random Access Memories$b[electronic resource] $eFundamentals and Applications /$fedited by Hiroshi Ishiwara, Masanori Okuyama, Yoshihiro Arimoto 205 $a1st ed. 2004. 210 1$aBerlin, Heidelberg :$cSpringer Berlin Heidelberg :$cImprint: Springer,$d2004. 215 $a1 online resource (XIII, 291 p.) 225 1 $aTopics in Applied Physics,$x0303-4216 ;$v93 300 $aBibliographic Level Mode of Issuance: Monograph 311 $a3-540-40718-9 327 $aPart I Ferroelectric Thin Films: Overview -- Novel Si-substituted Ferroelectric Films -- Static and Dynamic Properties of Domains -- Nanoscale Phenomena in Ferroelectric Thin Films -- Part II Deposition and Characterization Methods: Sputtering Techniques -- Chemical Approach Using Tailored Liquid Sources to Bi-based Layer-structured Perovskite Thin Films -- Recent Development of Ferroelectric Thin Films by MOCVD -- Materials Integration Strategies -- Characterization by Scanning Nonlinear Dielectric Microscopy -- Part III Fabrication Process and Circuit Design: Current Status of FeRAMs -- Operation Principle and Circuit Design Issues -- High Density Integration -- Testing and Reliability -- Part IV Advanced-Type Memories: Chain FeRAMs -- Capacitor-on-Metal/Via-stacked-Plug (CMVP) Memory Cell and Application to a Non-volatile SRAM -- FET-type FeRAMs -- Part V Applications and Future Prospects: Application to Future Information Technology World -- Subject Index. 330 $aIn fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts; (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects, and each part is further devided in several chapters. Because of the wide range of the discussed topics, each chapter in this book was written by one of the best authors knowing the specific topic very well. 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