LEADER 01523nam  2200349Ka 450 
001 9910698318603321
005 20080417144505.0
035   $a(CKB)4330000001921660
035   $a(OCoLC)225154065
035   $a(EXLCZ)994330000001921660
100   $a20080417d2006      ua             0
101 0 $aeng
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 00$aOn the effect of the film hydrogen content and deposition type on the grain nucleation and grain growth during crystallization of a-Si:H films$b[electronic resource] /$fA.H. Mahan ... [and others]
210  1$aGolden, CO :$cNational Renewable Energy Laboratory,$d2006.
215   $a1 sheet $cdigital, PDF file
225 1 $aNREL/PO ;$v520-39900
300   $aTitle from title screen (viewed Apr. 17, 2008).
300   $a"2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, Waikoloa, Hawaii, May 7-12, 2006."
517   $aOn the Effect of the Film Hydrogen Content and Deposition Type on the Grain Nucleation and Grain Growth During Crystallization of a-Si 
606   $aThin films$xResearch
615  0$aThin films$xResearch.
701   $aMahan$b A. Harv$01385028
712 02$aNational Renewable Energy Laboratory (U.S.)
801  0$bGPO
801  1$bGPO
906   $aBOOK
912   $a9910698318603321
996   $aOn the effect of the film hydrogen content and deposition type on the grain nucleation and grain growth during crystallization of a-Si:H films$93450112
997   $aUNINA