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035   $a(OCoLC)181656313
035   $a(EXLCZ)994330000001973425
100   $a20071120d2007      ua             0
101 0 $aeng
135   $aurmn|||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aSi passivation and chemical vapor deposition of silicon nitride$b[electronic resource] $efinal technical report, March 18, 2007 /$fH.A. Atwater
210  1$aGolden, Colo. :$cNational Renewable Energy Laboratory,$d[2007]
215   $aiv, 33 pages $cdigital, PDF file
225 1 $aNREL/SR ;$v520-42325
300   $aTitle from title screen (viewed Mar. 20, 2008).
300   $a"November 2007."
517   $aSi Passivation and Chemical Vapor Deposition of Silicon Nitride 
606   $aPhotovoltaic cells$xResearch
606   $aPolycrystalline semiconductors$xResearch
606   $aSilicon
606   $aThin films
615  0$aPhotovoltaic cells$xResearch.
615  0$aPolycrystalline semiconductors$xResearch.
615  0$aSilicon.
615  0$aThin films.
700   $aAtwater$b H. A$0753411
712 02$aNational Renewable Energy Laboratory (U.S.)
801  0$bSOE
801  1$bSOE
801  2$bSOE
801  2$bGPO
906   $aBOOK
912   $a9910698316803321
996   $aSi passivation and chemical vapor deposition of silicon nitride$93472207
997   $aUNINA