LEADER 01337nam  2200361Ka 450 
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100   $a20060330d2005      ua             0
101 0 $aeng
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 00$aElectron traps in p-type GaAsN characterized by deep-level transient spectroscopy$b[electronic resource] /$fS.W. Johnston ... [and others]
210  1$aGolden, Colo. :$cNational Renewable Energy Laboratory,$d[2005]
215   $a1 volume $cdigital, PDF file
225 1 $aConference paper ;$vNREL/CP-520-37474
300   $aTitle from title screen (viewed on Mar. 30, 2006).
300   $a"February 2005."
606   $aDeep level transient spectroscopy
606   $aMetal organic chemical vapor deposition
615  0$aDeep level transient spectroscopy.
615  0$aMetal organic chemical vapor deposition.
701   $aJohnston$b Steven Wade$01382578
712 02$aNational Renewable Energy Laboratory (U.S.)
801  0$bGPO
801  1$bGPO
906   $aBOOK
912   $a9910698290903321
996   $aElectron traps in p-type GaAsN characterized by deep-level transient spectroscopy$93426280
997   $aUNINA