LEADER 01213nam  2200361Ka 450 
001 9910698127803321
005 20090527091011.0
035   $a(CKB)5470000002395705
035   $a(OCoLC)351632181
035   $a(EXLCZ)995470000002395705
100   $a20090526d2008      uy             0
101 0 $aeng
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aDevelopment of gate and base drive using SiC junction field effect transistors$b[electronic resource] /$fby Timothy E. Griffin
210  1$aAdelphi, Md. :$cArmy Research Laboratory,$d[2008]
215   $aiv, 16 pages $cdigital, PDF file
225 1 $aARL-TR ;$v4475
300   $aTitle from title screen (viewed on May 26, 2009).
300   $a"May 2008."
606   $aField-effect transistors
606   $aJunction transistors
615  0$aField-effect transistors.
615  0$aJunction transistors.
700   $aGriffin$b Timothy E$01391748
712 02$aU.S. Army Research Laboratory.
801  0$bGPO
801  1$bGPO
906   $aBOOK
912   $a9910698127803321
996   $aDevelopment of gate and base drive using SiC junction field effect transistors$93483520
997   $aUNINA