LEADER 01860nam  2200445Ia 450 
001 9910698062603321
005 20090424140144.0
035   $a(CKB)5470000002394376
035   $a(OCoLC)310979413
035   $a(EXLCZ)995470000002394376
100   $a20090226d1999      ua             0
101 0 $aeng
135   $aurbn|||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 00$aEffect of the evaporation temperature of a tetraphenyl-tetramethyl-trisiloxane (Dow-Corning 704) precursor on the properties of silicon containing diamond-like carbon (Si-DLC) coatings synthesized by ion-beam-assisted deposition (IBAD)$b[electronic resource] /$fby C. G. Fountzoulas ... [and others]
210  1$aAberdeen Proving Ground, MD :$cArmy Research Laboratory,$d[1999]
215   $aviii, 14 pages $cdigital, PDF file
225 1 $aARL-TR ;$v1942
300   $aTitle from title screen (viewed Feb. 26, 2009).
300   $a"May 1999."
320   $aIncludes bibliographical references (page 9).
517   $aEffect of the evaporation temperature of a tetraphenyl-tetramethyl-trisiloxane 
606   $aSurfaces (Technology)
606   $aSilicon
606   $aIon implantation
606   $aChemical bonds
615  0$aSurfaces (Technology)
615  0$aSilicon.
615  0$aIon implantation.
615  0$aChemical bonds.
701   $aFountzoulas$b C. G$g(Constantine G.)$01412005
712 02$aU.S. Army Research Laboratory.
801  0$bGPO
801  1$bGPO
906   $aBOOK
912   $a9910698062603321
996   $aEffect of the evaporation temperature of a tetraphenyl-tetramethyl-trisiloxane (Dow-Corning 704) precursor on the properties of silicon containing diamond-like carbon (Si-DLC) coatings synthesized by ion-beam-assisted deposition (IBAD)$93539801
997   $aUNINA