LEADER 01404nam  2200409Ia 450 
001 9910697682903321
005 20090226143328.0
035   $a(CKB)5470000002390130
035   $a(OCoLC)310979505
035   $a(EXLCZ)995470000002390130
100   $a20090226d1999      ua             0
101 0 $aeng
135   $aurbn|||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 00$aBand-bending effect of low-temperature GaAs on a pseudomorphic modulation-doped field-effect transistor$b[electronic resource] /$fW. D. Sun ... [and others]
210  1$aAdelphi, MD :$cArmy Research Laboratory,$d[1999]
215   $aiii, 13 pages $cdigital, PDF file
225 1 $aARL-TR ;$v1933
300   $aTitle from title screen (viewed Feb. 26, 2009).
300   $a"May 1999."
320   $aIncludes bibliographical references (page 7).
606   $aField-effect transistors
606   $aQuantum wells
606   $aPhotoluminescence
615  0$aField-effect transistors.
615  0$aQuantum wells.
615  0$aPhotoluminescence.
701   $aSun$b W. D$01409620
712 02$aU.S. Army Research Laboratory.
801  0$bGPO
801  1$bGPO
906   $aBOOK
912   $a9910697682903321
996   $aBand-bending effect of low-temperature GaAs on a pseudomorphic modulation-doped field-effect transistor$93496513
997   $aUNINA