LEADER 01492nam 2200409Ia 450 001 9910697176603321 005 20230902161554.0 035 $a(CKB)5470000002385144 035 $a(OCoLC)690897028 035 $a(EXLCZ)995470000002385144 100 $a20101209d2004 ua 0 101 0 $aeng 135 $aurmn||||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aDesign and analysis of a 15-kV package for wide bandgap semiconductor devices$b[electronic resource] /$fby Dimeji Ibitayo and C. Wesley Tipton 210 1$aAdelphi, MD :$cArmy Research Laboratory,$d[2004] 215 $a1 online resource (iv, 12 pages) $ccolor illustrations 225 1 $aARL-TR ;$v3225 300 $aTitle from title screen (viewed on Dec. 8, 2010). 300 $a"May 2004." 320 $aIncludes bibliographical references. 410 0$aARL-TR (Aberdeen Proving Ground, Md.) ;$v3225. 606 $aWide gap semiconductors$xDesign and construction 606 $aSilicon carbide 615 0$aWide gap semiconductors$xDesign and construction. 615 0$aSilicon carbide. 700 $aIbitayo$b Dimeji$01391969 701 $aTipton$b Charles W$g(Charles Wesley)$01391970 712 02$aU.S. Army Research Laboratory. 801 0$bGPO 801 1$bGPO 906 $aBOOK 912 $a9910697176603321 996 $aDesign and analysis of a 15-kV package for wide bandgap semiconductor devices$93446171 997 $aUNINA