LEADER 01739oam  2200445Ia 450 
001 9910697126203321
005 20230902161943.0
035   $a(CKB)5470000002385653
035   $a(OCoLC)653261363
035   $a(EXLCZ)995470000002385653
100   $a20100806d2010      ka             0
101 0 $aeng
135   $aurcn|||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aCharacterization of multi temperature and multi RF chuck power grown silicon nitride films by PECVD and ICP vapor deposiiton$b[electronic resource] /$fF. Semedy ... [and others]
210  1$aAdelphi, MD :$cArmy Resarch Laboratory,$d[2010]
215   $a1 online resource (vi, 14 pages) $ccolor illustrations
225 1 $aARL-TR ;$v5105
300   $aTitle from PDF title screen (viewed on Aug. 6, 2010).
300   $a"March 2010."
320   $aIncludes bibliographical references (page 11).
410  0$aARL-TR (Aberdeen Proving Ground, Md.) ;$v5105.
517 3 $aCharacterization of multi temperature and multi RF chuck power grown silicon nitride films by plasma enhanced chemical vapor deposition and inductive coupled plasma vapor deposition
606   $aSilicon nitride
606   $aChemical vapor deposition
615  0$aSilicon nitride.
615  0$aChemical vapor deposition.
700   $aSemendy$b Fred$01386303
712 02$aU.S. Army Research Laboratory.
801  0$bGPO
801  1$bGPO
801  2$bGPO
801  2$bOCLCQ
801  2$bGPO
906   $aBOOK
912   $a9910697126203321
996   $aCharacterization of multi temperature and multi RF chuck power grown silicon nitride films by PECVD and ICP vapor deposiiton$93464660
997   $aUNINA