LEADER 01641nam  2200433Ka 450 
001 9910696608903321
005 20080620140051.0
035   $a(CKB)5470000002380777
035   $a(OCoLC)232361115
035   $a(EXLCZ)995470000002380777
100   $a20080620d1999      ua             0
101 0 $aeng
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 00$aUse of very-high-frequency plasmas to prepare a-Si:H-based triple-junction solar cells at high deposition rates$b[electronic resource] $eannual technical status report, 11 March 1998-11 March 1999 /$fS.J. Jones ... [and others]
210  1$aGolden, Colo. :$cNational Renewable Energy Laboratory,$d[1999]
215   $a29 pages $cdigital, PDF file
225 1 $aNREL/SR ;$v520-26795
300   $aTitle from title screen (viewed June 20, 2008).
300   $a"September 1999."
300   $a"Subcontractor report."
517   $aUse of very-high-frequency plasmas to prepare a-Si
606   $aPhotovoltaic cells$xResearch
606   $aSolar cells
606   $aThin films
606   $aPlasma-enhanced chemical vapor deposition
615  0$aPhotovoltaic cells$xResearch.
615  0$aSolar cells.
615  0$aThin films.
615  0$aPlasma-enhanced chemical vapor deposition.
701   $aJones$b S. J$01396280
712 02$aNational Renewable Energy Laboratory (U.S.)
801  0$bGPO
801  1$bGPO
906   $aBOOK
912   $a9910696608903321
996   $aUse of very-high-frequency plasmas to prepare a-Si:H-based triple-junction solar cells at high deposition rates$93456087
997   $aUNINA