LEADER 01655oam  2200445Ka 450 
001 9910696371003321
005 20080108134310.0
035   $a(CKB)5470000002377119
035   $a(OCoLC)173019081
035   $a(EXLCZ)995470000002377119
100   $a20070918d2006      ua             0
101 0 $aeng
135   $aurmn|||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 00$a0.7-eV GaInAs junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) four-junction solar cell$b[electronic resource] $epreprint /$fD.J. Friedman ... [and others]
210  1$aGolden, CO :$cNational Renewable Energy Laboratory,$d[2006]
215   $a5 pages $cdigital, PDF file
225 1 $aNREL/CP ;$v520-39913
300   $a"Presented at the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4), Waikoloa, Hawaii, May 7-12, 2006."
300   $aTitle from title screen (viewed January 8, 2008).
300   $a"May 2006."
517   $a0.7-eV GaInAs junction for a GaInP/GaAs/GaInAs
606   $aSolar cells$xDesign and construction
606   $aPhotovoltaic cells$xResearch
606   $aGallium arsenide semiconductors
615  0$aSolar cells$xDesign and construction.
615  0$aPhotovoltaic cells$xResearch.
615  0$aGallium arsenide semiconductors.
701   $aFriedman$b Daniel J$g(Daniel Joseph)$025878
712 02$aNational Renewable Energy Laboratory (U.S.)
801  0$bSOE
801  1$bSOE
801  2$bSOE
801  2$bGPO
906   $aBOOK
912   $a9910696371003321
996   $a0.7-eV GaInAs junction for a GaInP$93478829
997   $aUNINA