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001 9910696154603321
005 20070921162104.0
035   $a(CKB)5470000002375265
035   $a(OCoLC)173025349
035   $a(EXLCZ)995470000002375265
100   $a20070918d2006      ua             0
101 0 $aeng
135   $aurmn|||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 00$aOn the effect of the film hydrogen content and deposition type on the grain nucleation and grain growth during crystallization of a-Si:H films$b[electronic resource] $epreprint /$fA.H. Mahan ... [and others]
210  1$aGolden, CO :$cNational Renewable Energy Laboratory,$d[2006]
215   $a4 pages $cdigital, PDF file
225 1 $aNREL/CP ;$v520-39901
300   $aTitle from title screen (viewed Sept. 21, 2007).
300   $a"Presented at the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4), Waikoloa, Hawaii, May 7-12, 2006."
300   $a"May 2006."
517   $aOn the effect of the film hydrogen content and deposition type on the grain nucleation and grain growth during crystallization of a-Si
606   $aThin films$xResearch
615  0$aThin films$xResearch.
701   $aMahan$b A. Harv$01385028
712 02$aNational Renewable Energy Laboratory (U.S.)
801  0$bSOE
801  1$bSOE
801  2$bGPO
906   $aBOOK
912   $a9910696154603321
996   $aOn the effect of the film hydrogen content and deposition type on the grain nucleation and grain growth during crystallization of a-Si:H films$93450112
997   $aUNINA