LEADER 03387nam 2200817z- 450 001 9910674373403321 005 20231214133144.0 010 $a3-03921-527-2 035 $a(CKB)4100000010106139 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/60888 035 $a(EXLCZ)994100000010106139 100 $a20202102d2019 |y 0 101 0 $aeng 135 $aurmn|---annan 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aThin Film Transistor 210 $cMDPI - Multidisciplinary Digital Publishing Institute$d2019 215 $a1 electronic resource (108 p.) 311 $a3-03921-526-4 330 $aRecently, new wide-band energy gap semiconductors can be grown by ALD, PLD, sputtering, or MOCVD. They have great potential for the fabrication and application to TFTs. Inorganic semiconductors have good stability against environmental degradation over their organic counterparts, whereas organic materials are usually flexible, transparent, and when solution-processed at low temperatures, are prone to degradation when exposed to heat, moisture, and oxygen. For this Special Issue, we invited researchers to submit papers discussing the development of new functional and smart materials, and inorganic as well as organic semiconductor materials, such as ZnO, InZnO, GaO, AlGaO, AnGaO, AlN/GaN, conducting polymers, molecular semiconductors, perovskite-based materials, carbon nanotubes, carbon nanotubes/polymer composites, and 2D materials (e.g., graphene, MoS2) and their potential applications in display drivers, radio frequency identification tags, e-paper, gas, chemical and biosensors, to name but a few. 610 $acharge transport and injection mechanisms 610 $aoptical synaptic devices 610 $aflat panel displays 610 $asimulation 610 $apersistent photoconductivity 610 $ahydrogen 610 $ainterdigitated 610 $ainterface state trap density 610 $atechnology computer aided design (TCAD) 610 $aoxygen defects 610 $aCorbino 610 $atransistor model evaluation 610 $ametal-halide lamp 610 $aInGaZnOx 610 $acontact resistances 610 $achemical treatment 610 $acolour difference 610 $aorganic transistor 610 $aequivalent circuit 610 $achannel-length dependence 610 $ajust noticeable difference 610 $aoxide semiconductor 610 $aOTFT 610 $achromaticity 610 $amodeling contact effects 610 $aoxygen deficiency 610 $adual-threshold inverter 610 $asurface treated 610 $acharge-carrier-mobility extraction 610 $aoptical detecting 610 $athin film transistor 610 $agreen 610 $aphoto-sensors 610 $amodelling 610 $acapacitor 610 $aTFT-LCD 610 $aorganic thin-film transistor 610 $aspectrum 610 $ahydrogen effect 610 $aorganic film growth 610 $atransparent conducting oxides 610 $aquartz-halogen lamp 610 $aoptical 610 $ablue LED 700 $aHorng$b Ray-Hua$4auth$01337934 906 $aBOOK 912 $a9910674373403321 996 $aThin Film Transistor$93057638 997 $aUNINA