LEADER 00749nam0-2200289 --450 001 9910645492903321 005 20230215110435.0 010 $a88-7005-924-3 100 $a20230215d1992----kmuy0itay5050 ba 101 0 $aita 102 $aIT 105 $a 001yy 200 1 $aAustralia$fMarco Moretti 210 $aMilano$cCLUP guide$d1992 215 $a495 p.$cill.$d17 cm 225 1 $aPaesi 300 $aFront. su 2 pagine. 610 0 $aAustralia$aGuide 676 $a919.404$v20 700 1$aMoretti,$bMarco$f<1954->$01276245 801 0$aIT$bUNINA$gREICAT$2UNIMARC 901 $aBK 912 $a9910645492903321 952 $aFONDO ROSSI 3511$bROSSI 3631$fFARBC 959 $aFARBC 996 $aAustralia$93007309 997 $aUNINA LEADER 03651nam 2200985z- 450 001 9910566470403321 005 20220506 035 $a(CKB)5680000000037676 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/81116 035 $a(oapen)doab81116 035 $a(EXLCZ)995680000000037676 100 $a20202205d2022 |y 0 101 0 $aeng 135 $aurmn|---annan 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 00$aHigh-Density Solid-State Memory Devices and Technologies 210 $aBasel$cMDPI - Multidisciplinary Digital Publishing Institute$d2022 215 $a1 online resource (210 p.) 311 08$a3-0365-3359-1 311 08$a3-0365-3360-5 330 $aThis Special Issue aims to examine high-density solid-state memory devices and technologies from various standpoints in an attempt to foster their continuous success in the future. Considering that broadening of the range of applications will likely offer different types of solid-state memories their chance in the spotlight, the Special Issue is not focused on a specific storage solution but rather embraces all the most relevant solid-state memory devices and technologies currently on stage. Even the subjects dealt with in this Special Issue are widespread, ranging from process and design issues/innovations to the experimental and theoretical analysis of the operation and from the performance and reliability of memory devices and arrays to the exploitation of solid-state memories to pursue new computing paradigms. 606 $aHistory of engineering & technology$2bicssc 606 $aTechnology: general issues$2bicssc 610 $a3D NAND 610 $a3D NAND Flash 610 $aarray test pattern 610 $aartificial intelligence 610 $aartificial neural networks 610 $abandwidth 610 $aBBCube 610 $abumpless 610 $acharge-trap cell 610 $aCMOS under array 610 $aCoFeB 610 $acomposite free layer 610 $aCOW 610 $acrosspoint array 610 $adeep learning 610 $adielectric 610 $aendurance 610 $aevaluation method 610 $afloating gate cell 610 $ain-memory computing 610 $alow power electronics 610 $alow-frequency noise 610 $aMOSFET 610 $an/a 610 $aNAND Flash memory 610 $aneuromorphic computing 610 $aNOR Flash memory arrays 610 $aoxide trapped charge 610 $aphonon 610 $apower consumption 610 $apower spectrum 610 $aprogram noise 610 $aprogram suspend 610 $apulse-width modulation 610 $arandom telegraph noise 610 $areliability 610 $aresistive switching memory 610 $aRTN 610 $aSolid State Drives 610 $aspectral index 610 $aspintronics 610 $aSTT-MRAM 610 $asurface roughness 610 $aTAT 610 $athermal management 610 $atransient analysis 610 $aTSV 610 $aWiener-Khinchin 610 $aWOW 610 $ayield 615 7$aHistory of engineering & technology 615 7$aTechnology: general issues 700 $aMonzio Compagnoni$b Christian$4edt$01314104 702 $aShirota$b Riichiro$4edt 702 $aMonzio Compagnoni$b Christian$4oth 702 $aShirota$b Riichiro$4oth 906 $aBOOK 912 $a9910566470403321 996 $aHigh-Density Solid-State Memory Devices and Technologies$93031710 997 $aUNINA