LEADER 04648nam 2201057z- 450 001 9910640000203321 005 20231214133523.0 010 $a3-0365-5944-2 035 $a(CKB)5470000001633350 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/95783 035 $a(EXLCZ)995470000001633350 100 $a20202301d2022 |y 0 101 0 $aeng 135 $aurmn|---annan 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aNanoscale Ferroic Materials?Ferroelectric, Piezoelectric, Magnetic, and Multiferroic Materials 210 $aBasel$cMDPI - Multidisciplinary Digital Publishing Institute$d2022 215 $a1 electronic resource (168 p.) 311 $a3-0365-5943-4 330 $aFerroic materials, including ferroelectric, piezoelectric, magnetic, and multiferroic materials, are receiving great scientific attention due to their rich physical properties. They have shown their great advantages in diverse fields of application, such as information storage, sensor/actuator/transducers, energy harvesters/storage, and even environmental pollution control. At present, ferroic nanostructures have been widely acknowledged to advance and improve currently existing electronic devices as well as to develop future ones. This Special Issue covers the characterization of crystal and microstructure, the design and tailoring of ferro/piezo/dielectric, magnetic, and multiferroic properties, and the presentation of related applications. These papers present various kinds of nanomaterials, such as ferroelectric/piezoelectric thin films, dielectric storage thin film, dielectric gate layer, and magnonic metamaterials. These nanomaterials are expected to have applications in ferroelectric non-volatile memory, ferroelectric tunneling junction memory, energy-storage pulsed-power capacitors, metal oxide semiconductor field-effect-transistor devices, humidity sensors, environmental pollutant remediation, and spin-wave devices. The purpose of this Special Issue is to communicate the recent developments in research on nanoscale ferroic materials. 606 $aResearch & information: general$2bicssc 606 $aPhysics$2bicssc 610 $aPMN-PT thin films 610 $apreferred orientation 610 $aferroelectric property 610 $adielectric property 610 $aflexible 610 $afilm capacitor 610 $aBa0.5Sr0.5TiO3/0.4BiFeO3-0.6SrTiO3 610 $aenergy storage properties 610 $aMOS capacitors 610 $aSm2O3 high-k gate dielectric 610 $aatomic layer deposition 610 $aconduction mechanisms 610 $ainterface state density 610 $aBSFM 610 $aphase transition 610 $aaging 610 $aelectrical properties 610 $aBiOCl/NaNbO3 610 $aheterojunction 610 $apiezocatalysis 610 $aphotocatalysis 610 $adegradation 610 $ahumidity sensing 610 $aimpedance-type sensors 610 $aorganometallic halide perovskite 610 $aHZO 610 $aPEALD 610 $aferroelectric memory 610 $adeposition temperature 610 $afilm density 610 $aremanent polarization 610 $afatigue endurance 610 $aCBTi-BFO 610 $afine grain 610 $aelectric breakdown strength 610 $arecoverable energy storage 610 $aspin waves 610 $aDzyaloshinskii?Moriya interaction 610 $aferromagnetism 610 $aspintronics 610 $atwo-dimensional materials 610 $aferroelectric properties 610 $ascanning probe microscope 610 $anegative piezoelectricity 610 $aphase segregation 610 $amultiferroic materials 610 $aanisotropy 610 $aDyFeO3 610 $amagnetoelectric coupling 610 $apulsed high magnetic field 610 $aDM interaction 610 $acrystalline YFeO3 610 $amagnetic properties 610 $aenhanced weak ferromagnetism 610 $aexchange interactions 615 7$aResearch & information: general 615 7$aPhysics 700 $aCheng$b Zhenxiang$4edt$01296437 702 $aYang$b Changhong$4edt 702 $aWang$b Chunchang$4edt 702 $aCheng$b Zhenxiang$4oth 702 $aYang$b Changhong$4oth 702 $aWang$b Chunchang$4oth 906 $aBOOK 912 $a9910640000203321 996 $aNanoscale Ferroic Materials?Ferroelectric, Piezoelectric, Magnetic, and Multiferroic Materials$93024075 997 $aUNINA