LEADER 03652nam 2200625 a 450 001 9910634053003321 005 20200520144314.0 010 $a1-283-00344-9 010 $a9786613003447 010 $a90-481-2877-3 024 7 $a10.1007/978-90-481-2877-8 035 $a(CKB)2550000000019137 035 $a(EBL)645716 035 $a(OCoLC)654396295 035 $a(SSID)ssj0000450208 035 $a(PQKBManifestationID)11311640 035 $a(PQKBTitleCode)TC0000450208 035 $a(PQKBWorkID)10433773 035 $a(PQKB)11363977 035 $a(DE-He213)978-90-481-2877-8 035 $a(MiAaPQ)EBC645716 035 $a(PPN)149065442 035 $a(EXLCZ)992550000000019137 100 $a20100312d2010 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 00$aRare earth doped III-nitrides for optoelectronic and spintronic applications /$fKevin O'Donnell, Volkmar Dierolf, editors 205 $a1st ed. 2010. 210 $aNew York $cSpringer$d2010 215 $a1 online resource (369 p.) 225 1 $aTopics in applied physics,$x0303-4216 ;$vv. 124 300 $aDescription based upon print version of record. 311 $a94-017-8472-8 311 $a90-481-2876-5 320 $aIncludes bibliographical references and index. 327 $aTheoretical Modelling of Rare Earth Dopants in GaN -- RE Implantation and Annealing of III-Nitrides -- Lattice Location of RE Impurities in IIINitrides -- Electroluminescent Devices Using RE-Doped III-Nitrides -- Er-Doped GaN and InxGa1-xN for Optical Communications -- Rare-Earth-Doped GaN Quantum Dot -- Visible Luminescent RE-doped GaN, AlGaN and AlInN -- Combined Excitation Emission Spectroscopy (CEES) of RE Ions in Gallium Nitride -- Excitation Mechanisms of RE Ions in Semiconductors -- High-Temperature Ferromagnetism in the Super-Dilute Magnetic Semiconductor GaN:Gd -- Summary and Prospects for Future Work. 330 $aThis book provides a snapshot of recent progress in the field of rare-earth-doped group III-nitride semiconductors, especially GaN, but extending to AlN and the alloys AlGaN, AlInN and InGaN. This material class is currently enjoying an upsurge in interest due to its ideal suitability for both optoelectronic and spintronic applications. The text first introduces the reader to the historical background and the major theoretical challenges presented when 4f electron systems are embedded in a semiconductor matrix. It details the preparation of samples for experimental study, either by in-situ growth or ion implantation/annealing, and describes their microscopic structural characterisation. Optical spectroscopy is a dominant theme, complicated by site multiplicity, whether in homogeneous hosts or in heterostructures such as quantum dots, and enlivened by the abiding fascination of the energy transfer mechanism between the host material and the lumophore. Finally, the rapid progress towards prospective optoelectronic and spintronic devices is presented along with several examples. 410 0$aTopics in applied physics ;$vv. 124. 606 $aDoped semiconductors 606 $aRare earth nitrates 615 0$aDoped semiconductors. 615 0$aRare earth nitrates. 676 $a546.41 701 $aO'Donnell$b Kevin$g(Kevin Peter),$f1950-$01399477 701 $aDierolf$b Volkmar$f1960-$01750816 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910634053003321 996 $aRare earth doped III-nitrides for optoelectronic and spintronic applications$94185489 997 $aUNINA