LEADER 03789nam 2200733 a 450 001 9910634034503321 005 20200520144314.0 010 $a1-281-25078-3 010 $a9786611250782 010 $a3-540-34591-4 024 7 $a10.1007/978-3-540-34591-6 035 $a(CKB)1000000000399142 035 $a(EBL)372316 035 $a(OCoLC)808729554 035 $a(SSID)ssj0000306032 035 $a(PQKBManifestationID)11247072 035 $a(PQKBTitleCode)TC0000306032 035 $a(PQKBWorkID)10311677 035 $a(PQKB)10659924 035 $a(SSID)ssj0000772892 035 $a(PQKBManifestationID)12266930 035 $a(PQKBTitleCode)TC0000772892 035 $a(PQKBWorkID)10826170 035 $a(PQKB)11057277 035 $a(DE-He213)978-3-540-34591-6 035 $a(MiAaPQ)EBC372316 035 $z(PPN)25884695X 035 $a(PPN)123155266 035 $a(EXLCZ)991000000000399142 100 $a20061108d2007 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 00$aPhysics of ferroelectrics $ea modern perspective /$fKarin M. Rabe, Charles H. Ahn, Jean-Marc Triscone, eds 205 $a1st ed. 2007. 210 $aBerlin ;$aNew York $cSpringer$dc2007 215 $a1 online resource (396 p.) 225 1 $aTopics in applied physics,$x0303-4216 ;$vv. 105 300 $a"With 129 figures and 24 tables." 311 $a3-642-07096-5 311 $a3-540-34590-6 320 $aIncludes bibliographical references and index. 327 $aAppendix B ? Material?Substrate Combinations Tables -- Modern Physics of Ferroelectrics: Essential Background -- Theory of Polarization: A Modern Approach -- A Landau Primer for Ferroelectrics -- First-Principles Studies of Ferroelectric Oxides -- Analogies and Differences between Ferroelectrics and Ferromagnets -- Growth and Novel Applications of Epitaxial Oxide Thin Films -- Ferroelectric Size Effects -- Nanoscale Studies of Domain Walls in Epitaxial Ferroelectric Thin Films -- APPENDIX A ? Landau Free-Energy Coefficients. 330 $aDuring the past two decades, revolutionary breakthroughs have occurred in the understanding of ferroelectric materials, both from the perspective of theory and experiment. First principles approaches, including the Berry phase formulation of ferroelectricity, now allow accurate, quantitative predictions of material properties, and single crystalline thin films are now available for fundamental studies of these materials. In addition, the need for high dielectric constant insulators and nonvolatile memories in semiconductor applications has motivated a renaissance in the investigation of these materials. This book addresses the paradigmatic shifts in understanding brought about by these breakthroughs, including the consideration of novel fabrication methods of single crystalline ferroelectric thin films and nanoscale applications of these materials, and new theoretical methods such as the effective Hamiltonian approach and density functional theory. A book for practicing scientists as well as graduate students. 410 0$aTopics in applied physics ;$vv. 105. 606 $aFerroelectricity 606 $aFerroelectric devices$xMaterials 606 $aFerroelectric thin films 615 0$aFerroelectricity. 615 0$aFerroelectric devices$xMaterials. 615 0$aFerroelectric thin films. 676 $a537/.2448 701 $aRabe$b Karin M$g(Karin Maria)$01757530 701 $aAhn$b Charles H$01757531 701 $aTriscone$b Jean-Marc$01757532 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910634034503321 996 $aPhysics of ferroelectrics$94195407 997 $aUNINA