LEADER 03687nam 2200805z- 450 001 9910619472303321 005 20231214133100.0 010 $a3-0365-5262-6 035 $a(CKB)5670000000391551 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/93245 035 $a(EXLCZ)995670000000391551 100 $a20202210d2022 |y 0 101 0 $aeng 135 $aurmn|---annan 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aSynthesis, Properties and Applications of Germanium Chalcogenides 210 $cMDPI - Multidisciplinary Digital Publishing Institute$d2022 215 $a1 electronic resource (154 p.) 311 $a3-0365-5261-8 330 $aGermanium (Ge) chalcogenides are characterized by unique properties that make these materials interesting for a very wide range of applications from phase change memories to ovonic threshold switches and from photonics to thermoelectric and photovoltaic devices. In many cases, their physical properties can be finely tuned by doping or by changing the amount of Ge, which may therefore play a key role in determining the applications, performance, and even the reliability of these devices. In this book, we include 11 articles, mainly focusing on applications of Ge chalcogenides for non-volatile memories. Most of the papers have been produced with funding received from the European Union?s Horizon 2020 Research and Innovation program under grant agreement n. 824957. In the Special Issue ?BeforeHand: Boosting Performance of Phase Change Devices by Hetero- and Nanostructure Material Design?, two contributions are related to the prototypical Ge2Sb2Te5 compound, which is the most studied composition, already integrated in many devices such as optical and electronic memories. Five articles focus on Ge-rich GeSbTe alloys, exploring the electrical and the structural properties, as well as the decomposition paths. Other contributions are focused on the effect of the interfaces and on nanowires. 606 $aTechnology: general issues$2bicssc 606 $aChemical engineering$2bicssc 610 $aPCM 610 $aGe2Sb2Te5 610 $asputtering 610 $aflexible substrates 610 $acrystallization 610 $aelectrical properties 610 $aphase change materials 610 $anitrogen 610 $astrain 610 $akinetics 610 $aamorphous phase 610 $agermanium telluride 610 $aindium alloying 610 $aoptical contrast 610 $aGe-rich alloys 610 $acrystallization temperature 610 $asegregation 610 $aGe-rich GST alloys 610 $aRaman 610 $aelectronic properties 610 $aGe-rich GST 610 $apulsed laser deposition 610 $aphase separation 610 $aGGST 610 $aEDX elemental chemical mapping 610 $aembedded memory 610 $adensity functional theory 610 $aMOCVD 610 $aVLS 610 $aphase-change memory 610 $ananowires 610 $acore-shell 610 $aGe?Sb?Te 610 $aGe?Sb?Te/Sb2Te3 610 $aembedded electronic memories 610 $aDensity Functional Theory 610 $ahigh-throughput calculations 610 $a  615 7$aTechnology: general issues 615 7$aChemical engineering 700 $aPrivitera$b Stefania M. S$4edt$01315243 702 $aPrivitera$b Stefania M. S$4oth 906 $aBOOK 912 $a9910619472303321 996 $aSynthesis, Properties and Applications of Germanium Chalcogenides$93032291 997 $aUNINA