LEADER 03792nam 2200457 450 001 9910616385303321 005 20231110223426.0 010 $a9783031120930$b(electronic bk.) 010 $z9783031120923 035 $a(MiAaPQ)EBC7107653 035 $a(Au-PeEL)EBL7107653 035 $a(CKB)24996008600041 035 $a(PPN)265857392 035 $a(EXLCZ)9924996008600041 100 $a20230302d2022 uy 0 101 0 $aeng 135 $aurcnu|||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aAtomic and electronic properties of 2D moire? interfaces /$fAstrid Weston 210 1$aCham, Switzerland :$cSpringer,$d[2022] 210 4$d©2022 215 $a1 online resource (148 pages) 225 1 $aSpringer Theses 311 08$aPrint version: Weston, Astrid Atomic and Electronic Properties of 2D Moiré Interfaces Cham : Springer International Publishing AG,c2022 9783031120923 327 $aIntro -- Supervisor's Foreword -- Abstract -- Acknowledgements -- Contents -- Abbreviations -- 1 Thesis Outline -- References -- 2 Introduction to 2-Dimensional Materials and Moiré Superlattices -- 2.1 2-Dimensional Materials -- 2.1.1 Graphene -- 2.1.2 Hexagonal Boron Nitride -- 2.1.3 Transition Metal Dichalcogenides -- 2.2 Moiré Superlattices -- 2.2.1 Graphene and Hexagonal Boron Nitride -- 2.2.2 Twisted Bilayer Graphene -- 2.2.3 Twisted Bilayer TMDs -- 2.3 Summary -- References -- 3 Fabrication Techniques -- 3.1 Introduction -- 3.2 Mechanical Exfoliation and Crystal Identification -- 3.3 PMMA Dry Transfer Technique -- 3.4 Fabrication of Twisted Bilayer Heterotructures -- 3.5 Contamination and Air-Sensitivity in vdWs Heterostructures -- 3.6 Fabrication of Electrical Contacts -- 3.6.1 Shadow Mask Contacts -- 3.6.2 Electron Beam Lithography Contacts -- 3.6.3 Electron Beam Metal Deposition -- 3.7 Summary -- References -- 4 Characterisation Techniques -- 4.1 Scanning Probe Microscopy -- 4.1.1 Contact Mode -- 4.1.2 Tapping Mode -- 4.1.3 Electrical SPM Modes -- 4.1.4 AFM Image Processing -- 4.2 Electron Microscopy -- 4.2.1 Principles of Electron-Matter Interaction -- 4.2.2 Scanning Electron Microscopy -- 4.2.3 SEM Image Processing -- 4.2.4 Scanning Transmission Electron Microscopy -- 4.2.5 Atomic Resolution STEM Image Processing -- 4.2.6 Electron Beam Induced Effects -- 4.3 Summary -- References -- 5 Atomic Structure of Reconstructed Lattices of Twisted Bilayer TMDs -- 5.1 Sample Fabrication -- 5.2 Dark Field LAADF-STEM -- 5.3 Atomic Resolution HAADF-STEM -- 5.4 Multi-scale Modelling of Atomic Structure -- 5.5 Summary -- References -- 6 Electrical Properties of Reconstructed Lattices of Twisted Bilayer TMDs -- 6.1 Conductive-AFM Study of TMD Homobilayers -- 6.1.1 3R-Type Twisted Homobilayers -- 6.1.2 2H-Type Twisted Homobilayers. 327 $a6.2 Kelvin Probe Force Microscopy Studies of 3R-Type Twisted Bilayer MoSSubscript 22 -- 6.3 Scanning Electron Microscopy Studies of 3R-Type Twisted Bilayer MoSSubscript 22 -- 6.4 Electron Tunnelling in 3R-Type Twisted Bilayer MoSSubscript 22 -- 6.4.1 Reference 2H Bilayer MoSSubscript 22 Tunnelling Device -- 6.4.2 3R-Type Twisted Bilayer MoSSubscript 22 Tunnelling Devices -- 6.4.3 Ferroelectric Devices with Hall Bar Geometry -- 6.5 Summary -- References -- 7 Final Conclusions and Future Outlooks. 410 0$aSpringer Theses 606 $aAtomic theory 606 $aSuperlattices as materials 615 0$aAtomic theory. 615 0$aSuperlattices as materials. 676 $a181.07 700 $aWeston$b Astrid$01262329 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 912 $a9910616385303321 996 $aAtomic and Electronic Properties of 2D Moiré Interfaces$92950594 997 $aUNINA