LEADER 03512nam 2200697z- 450 001 9910566483803321 005 20220506 035 $a(CKB)5680000000037542 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/81001 035 $a(oapen)doab81001 035 $a(EXLCZ)995680000000037542 100 $a20202205d2022 |y 0 101 0 $aeng 135 $aurmn|---annan 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 00$aMagnetic and Spin Devices 210 $aBasel$cMDPI - Multidisciplinary Digital Publishing Institute$d2022 215 $a1 online resource (84 p.) 311 08$a3-0365-3842-9 311 08$a3-0365-3841-0 330 $aAs the scaling of electronic semiconductor devices displays signs of saturation, the main focus of research in microelectronics is shifting towards finding new computing paradigms. Electron spin offers additional functionality to digital charge-based devices. Several fundamental problems, including spin injection to a semiconductor, spin propagation and relaxation, and spin manipulation by the gate voltage, have been successfully resolved to open a path towards spin-based reprogrammable electron switches. Devices employing electron spin are nonvolatile; they are able to preserve the stored information without external power. Emerging nonvolatile devices are electrically addressable, possess a simple structure, and offer endurance and speed superior to flash memory. Having nonvolatile memory very close to CMOS offers a prospect of data processing in the nonvolatile segment, where the same devices are used to store and process the information. This opens perspectives for conceptually new low-power computing paradigms within Artificial Intelligence of Things (AIoT). This Special Issue focuses on all topics related to spintronic devices such as spin-based switches, magnetoresistive memories, energy harvesting devices, and sensors that can be employed in in-memory computing concepts and in Artificial Intelligence. 606 $aPhysics$2bicssc 606 $aResearch & information: general$2bicssc 610 $aautomation 610 $abit-patterned media 610 $acombined spin-transfer torque (STT) and spin-orbit torque (SOT) switching 610 $acurrent perpendicular-to-the-plane giant magnetoresistance 610 $adamping like torque 610 $aexchange-coupled-composite media 610 $aextreme conditions 610 $afield like torque 610 $aHeusler alloys 610 $ahysteresis loop 610 $amachine learning 610 $amagnetic contacts 610 $amagnetic field-free switching 610 $amagnetic read heads 610 $amagnetic recording 610 $amagnetic tunnel junction 610 $amicrowave-assisted magnetic recording 610 $an/a 610 $apractical tests 610 $areaction distance 610 $areinforcement learning 610 $areliability 610 $aspin-orbit torque MRAM 610 $athe calculation in memory 610 $atorque 610 $atwo-pulse switching scheme 615 7$aPhysics 615 7$aResearch & information: general 700 $aSverdlov$b Viktor$4edt$01303408 702 $aJutong$b Nuttachai$4edt 702 $aSverdlov$b Viktor$4oth 702 $aJutong$b Nuttachai$4oth 906 $aBOOK 912 $a9910566483803321 996 $aMagnetic and Spin Devices$93027008 997 $aUNINA