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035   $a(CKB)5680000000037676
035   $a(oapen)https://directory.doabooks.org/handle/20.500.12854/81116
035   $a(EXLCZ)995680000000037676
100   $a20202205d2022      |y             0
101 0 $aeng
135   $aurmn|---annan
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aHigh-Density Solid-State Memory Devices and Technologies
210   $aBasel$cMDPI - Multidisciplinary Digital Publishing Institute$d2022
215   $a1 electronic resource (210 p.)
311   $a3-0365-3359-1 
311   $a3-0365-3360-5 
330   $aThis Special Issue aims to examine high-density solid-state memory devices and technologies from various standpoints in an attempt to foster their continuous success in the future. Considering that broadening of the range of applications will likely offer different types of solid-state memories their chance in the spotlight, the Special Issue is not focused on a specific storage solution but rather embraces all the most relevant solid-state memory devices and technologies currently on stage. Even the subjects dealt with in this Special Issue are widespread, ranging from process and design issues/innovations to the experimental and theoretical analysis of the operation and from the performance and reliability of memory devices and arrays to the exploitation of solid-state memories to pursue new computing paradigms.
606   $aTechnology: general issues$2bicssc
606   $aHistory of engineering & technology$2bicssc
610   $aresistive switching memory
610   $ain-memory computing
610   $acrosspoint array
610   $aartificial intelligence
610   $adeep learning
610   $adielectric
610   $aRTN
610   $aTAT
610   $aWiener-Khinchin
610   $atransient analysis
610   $aphonon
610   $asurface roughness
610   $aspectral index
610   $apower spectrum
610   $aprogram suspend
610   $a3D NAND Flash
610   $aSolid State Drives
610   $aMOSFET
610   $alow-frequency noise
610   $arandom telegraph noise
610   $aevaluation method
610   $aarray test pattern
610   $aSTT-MRAM
610   $aspintronics
610   $aCoFeB
610   $acomposite free layer
610   $alow power electronics
610   $aNAND Flash memory
610   $aendurance
610   $areliability
610   $aoxide trapped charge
610   $aartificial neural networks
610   $aneuromorphic computing
610   $aNOR Flash memory arrays
610   $aprogram noise
610   $apulse-width modulation
610   $a3D NAND
610   $afloating gate cell
610   $acharge-trap cell
610   $aCMOS under array
610   $abumpless
610   $aTSV
610   $aWOW
610   $aCOW
610   $aBBCube
610   $abandwidth
610   $ayield
610   $apower consumption
610   $athermal management
615  7$aTechnology: general issues
615  7$aHistory of engineering & technology
700   $aMonzio Compagnoni$b Christian$4edt$01314104
702   $aShirota$b Riichiro$4edt
702   $aMonzio Compagnoni$b Christian$4oth
702   $aShirota$b Riichiro$4oth
906   $aBOOK
912   $a9910566470403321
996   $aHigh-Density Solid-State Memory Devices and Technologies$93031710
997   $aUNINA