LEADER 04152nam 2200865z- 450 001 9910557617103321 005 20231214133430.0 035 $a(CKB)5400000000045230 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/79581 035 $a(EXLCZ)995400000000045230 100 $a20202203d2022 |y 0 101 0 $aeng 135 $aurmn|---annan 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aFlash Memory Devices 210 $aBasel$cMDPI - Multidisciplinary Digital Publishing Institute$d2022 215 $a1 electronic resource (144 p.) 311 $a3-0365-3012-6 311 $a3-0365-3013-4 330 $aFlash memory devices have represented a breakthrough in storage since their inception in the mid-1980s, and innovation is still ongoing. The peculiarity of such technology is an inherent flexibility in terms of performance and integration density according to the architecture devised for integration. The NOR Flash technology is still the workhorse of many code storage applications in the embedded world, ranging from microcontrollers for automotive environment to IoT smart devices. Their usage is also forecasted to be fundamental in emerging AI edge scenario. On the contrary, when massive data storage is required, NAND Flash memories are necessary to have in a system. You can find NAND Flash in USB sticks, cards, but most of all in Solid-State Drives (SSDs). Since SSDs are extremely demanding in terms of storage capacity, they fueled a new wave of innovation, namely the 3D architecture. Today ?3D? means that multiple layers of memory cells are manufactured within the same piece of silicon, easily reaching a terabit capacity. So far, Flash architectures have always been based on "floating gate," where the information is stored by injecting electrons in a piece of polysilicon surrounded by oxide. On the contrary, emerging concepts are based on "charge trap" cells. In summary, flash memory devices represent the largest landscape of storage devices, and we expect more advancements in the coming years. This will require a lot of innovation in process technology, materials, circuit design, flash management algorithms, Error Correction Code and, finally, system co-design for new applications such as AI and security enforcement. 606 $aTechnology: general issues$2bicssc 610 $aretention characteristic 610 $ahigh-? 610 $anonvolatile charge-trapping memory 610 $astack engineering 610 $aNOR flash memory 610 $aaluminum oxide 610 $aNAND flash memory 610 $ainterference 610 $aTechnology Computer Aided Design (TCAD) simulation 610 $adisturbance 610 $aprogram 610 $anon-volatile memory (NVM) 610 $a3D NAND Flash memories 610 $arandom telegraph noise 610 $aFlash memory reliability 610 $atest platform 610 $aendurance 610 $asupport vector machine 610 $araw bit error 610 $a3D NAND Flash 610 $aRBER 610 $areliability 610 $aflash signal processing 610 $arandomization scheme 610 $asolid-state drives 610 $a3D flash memory 610 $aperformance cliff 610 $atail latency 610 $agarbage collection 610 $aartificial neural network 610 $aerror correction code 610 $awork function 610 $aeffective work function 610 $adipole 610 $ametal gate 610 $ahigh-k 610 $aSiO2 610 $ainterfacial reaction 610 $aMHONOS 610 $aerase performance 610 $a3D NAND flash memory 610 $atemperature 610 $aread disturb 615 7$aTechnology: general issues 700 $aZambelli$b Cristian$4edt$01287871 702 $aMicheloni$b Rino$4edt 702 $aZambelli$b Cristian$4oth 702 $aMicheloni$b Rino$4oth 906 $aBOOK 912 $a9910557617103321 996 $aFlash Memory Devices$93020506 997 $aUNINA