LEADER 03292nam  2200637z- 450 
001 9910557533403321
005 20210501
035   $a(CKB)5400000000044244
035   $a(oapen)https://directory.doabooks.org/handle/20.500.12854/68326
035   $a(oapen)doab68326
035   $a(EXLCZ)995400000000044244
100   $a20202105d2021      |y         0
101 0 $aeng
135   $aurmn|---annan
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 00$aSynthesis and Characterization of Ferroelectrics
210   $aBasel, Switzerland$cMDPI - Multidisciplinary Digital Publishing Institute$d2021
215   $a1 online resource (74 p.)
311 08$a3-03943-655-4 
311 08$a3-03943-656-2 
330   $aThe Special Issue on "Synthesis and Characterization of Ferroelectrics" reports on several physical properties of ferroelectric materials and their technological aspects. Different substitution mechanisms provide ideas toward future improvement of lead-free (Ba,Ca)(Zr,Ti)O3 piezoelectric ceramics, including the electrocaloric effect, fluorescence, and energy storage. It is established that axial and radial element segregation differently influences electrical properties of 0.68Pb(Mg1/3Nb2/3)0.32PbTiO3 (PMN-32PT for short) single crystals. While the electrical properties along the axial direction strongly depend on the PbTiO3 content, the electrical properties along the axial direction are mainly determined by the ratio of Nb and Mg. On the other hand, Fe-substitution of PMN-32PT crystals lead to an enhancement of the coercive field due to wall pinning induced by charged defect dipoles. It is also found, that capacitors based on Pt/Na0.5Bi0.5TiO3/La0.5Sr0.5CoO3 thin films display good fatigue resistance and retention. Another lead-free thin film capacitor fabricated from Ba0.3Sr0.7Zr0.18Ti0.82 features a low leakage current density and high breakdown strength. Such capacitors are essential for energy storage. Furthermore, an enhanced electrocaloric effect on 0.73Pb(Mg1/3Nb2/3)0.27PbTiO3 single crystals is demonstrated. This effect is promising for novel solid-state cooling systems.
606   $aResearch & information: general$2bicssc
610   $aacceptor doping
610   $aBridgman technique
610   $aBSZT thin films
610   $acapacitance properties
610   $aceramic
610   $acharacterization
610   $acharged defects
610   $adielectric relaxation
610   $aelectrical conduction
610   $aelectrocaloric effect
610   $aferroelectric materials
610   $aferroelectric properties
610   $alead-free
610   $aMaxwell relation
610   $an/a
610   $aNBT epitaxial film
610   $aP-E hysteresis loop
610   $apiezoelectric
610   $aPMN-32PT
610   $aPMN-32PT single crystal
610   $aPMN-PT
610   $aRF magnetron sputtering
610   $asegregation
610   $asingle crystals
610   $aultraviolet light
615  7$aResearch & information: general
700   $aDec$b Jan$4edt$01312707
702   $aDec$b Jan$4oth
906   $aBOOK
912   $a9910557533403321
996   $aSynthesis and Characterization of Ferroelectrics$93030938
997   $aUNINA