LEADER 04769nam 2201141z- 450 001 9910557498703321 005 20210501 035 $a(CKB)5400000000042844 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/68646 035 $a(oapen)doab68646 035 $a(EXLCZ)995400000000042844 100 $a20202105d2020 |y 0 101 0 $aeng 135 $aurmn|---annan 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 00$aSiC based Miniaturized Devices 210 $aBasel, Switzerland$cMDPI - Multidisciplinary Digital Publishing Institute$d2020 215 $a1 online resource (170 p.) 311 08$a3-03936-010-8 311 08$a3-03936-011-6 330 $aMEMS devices are found in many of today's electronic devices and systems, from air-bag sensors in cars to smart phones, embedded systems, etc. Increasingly, the reduction in dimensions has led to nanometer-scale devices, called NEMS. The plethora of applications on the commercial market speaks for itself, and especially for the highly precise manufacturing of silicon-based MEMS and NEMS. While this is a tremendous achievement, silicon as a material has some drawbacks, mainly in the area of mechanical fatigue and thermal properties. Silicon carbide (SiC), a well-known wide-bandgap semiconductor whose adoption in commercial products is experiening exponential growth, especially in the power electronics arena. While SiC MEMS have been around for decades, in this Special Issue we seek to capture both an overview of the devices that have been demonstrated to date, as well as bring new technologies and progress in the MEMS processing area to the forefront. Thus, this Special Issue seeks to showcase research papers, short communications, and review articles that focus on: (1) novel designs, fabrication, control, and modeling of SiC MEMS and NEMS based on all kinds of actuation mechanisms; and (2) new developments in applying SiC MEMS and NEMS in consumer electronics, optical communications, industry, medicine, agriculture, space, and defense. 606 $aHistory of engineering and technology$2bicssc 610 $a3C-SiC 610 $a4H-SiC 610 $a4H-SiC, epitaxial layer 610 $a6H-SiC 610 $aaluminum nitride 610 $aamorphous SiC 610 $aBerkovich indenter 610 $abulge test 610 $abulk micromachining 610 $acircular membrane 610 $acleavage strength 610 $acritical depth of cut 610 $acritical load 610 $adeep level transient spectroscopy (DLTS) 610 $adeformation 610 $adoped SiC 610 $aelectrochemical characterization 610 $aelectrochemical etching 610 $aelectron beam induced current spectroscopy (EBIC) 610 $aepitaxial growth 610 $aFEM 610 $agrazing incidence X-ray diffraction (GIXRD) 610 $ahigh-power impulse magnetron sputtering (HiPIMS) 610 $ahigh-temperature converters 610 $aindentation 610 $amaterial removal mechanisms 610 $aMEA 610 $amechanical properties 610 $aMEMS devices 610 $aMESFET 610 $amicroelectrode array 610 $amicrostrip detector 610 $an-type 610 $an/a 610 $ananoscratching 610 $anegative gate-source voltage spike 610 $aneural implant 610 $aneural interface 610 $aneural probe 610 $ap-type 610 $aPAE 610 $apoint defects 610 $apower electronics 610 $apower module 610 $apulse height spectroscopy (PHS) 610 $aradiation detector 610 $aRaman spectroscopy 610 $aresidual stress 610 $aRutherford backscattering spectrometry (RBS) 610 $aSchottky barrier 610 $asemiconductor radiation detector 610 $aSiC 610 $aSiC power electronic devices 610 $asilicon carbide 610 $asimulation 610 $athermally stimulated current spectroscopy (TSC) 610 $athin film 610 $avibrometry 610 $aYoung's modulus 615 7$aHistory of engineering and technology 702 $aSaddow$b Stephen Edward 702 $aAlquier$b Daniel 702 $aWang$b Jing$f1978 March- 702 $aLa Via$b Francesco 702 $aFraga$b Mariana Amorim 702 $aSaddow$b Stephen E. 702 $aAlquier$b Daniel$4oth 702 $aWang$b Jing$4oth 702 $aLa Via$b Francesco$4oth 702 $aFraga$b Mariana$4oth 906 $aBOOK 912 $a9910557498703321 996 $aSiC based Miniaturized Devices$93021405 997 $aUNINA