LEADER 01280nam a2200289 i 4500 001 991004031779707536 005 20020506112400.0 008 950201s1974 it ||| | ita 035 $ab10589454-39ule_inst 035 $aEXGIL130987$9ExL 040 $aBiblioteca Interfacoltà$bita 100 1 $aModica, Vincenzo$0470581 245 10$a1. Divisione d'assalto Garibaldi Leo Lanfranco :$bdocumenti inediti della guerra partigiana : 1943-1945 /$c[a cura di Vincenzo Modica, Isacco Nahoum, Giovanni Negro] 246 10$aPrima Divisione d'assalto Garibaldi Leo Lanfranco :$bdocumenti inediti della guerra partigiana : 1943-1945 260 $aTorino :$bEdizioni ANPI,$c1974 300 $a287 p. ;$c31 cm. 500 $aI curatori dal verso del front. 650 4$aCorpo volontari della libertà - Divisione Garibaldi Leo Lanfranco$zPiemonte 650 4$aResistenza$zPiemonte 700 1 $aNahoum, Isacco 700 1 $aNegro, Giovanni 907 $a.b10589454$b02-04-14$c27-06-02 912 $a991004031779707536 945 $aLE002 Fondo Berg. 1931$g1$iLE002-733N$lle002$o-$pE0.00$q-$rn$so $t0$u0$v0$w0$x0$y.i10673507$z27-06-02 996 $a1. Divisione d'assalto Garibaldi Leo Lanfranco$9237094 997 $aUNISALENTO 998 $ale002$b01-01-95$cm$da $e-$fita$git $h2$i1 LEADER 06276nam 2201453z- 450 001 9910557351703321 005 20220111 035 $a(CKB)5400000000042373 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/76339 035 $a(oapen)doab76339 035 $a(EXLCZ)995400000000042373 100 $a20202201d2021 |y 0 101 0 $aeng 135 $aurmn|---annan 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 00$aWide Bandgap Based Devices$eDesign, Fabrication and Applications 210 $aBasel, Switzerland$cMDPI - Multidisciplinary Digital Publishing Institute$d2021 215 $a1 online resource (242 p.) 311 08$a3-0365-0566-0 311 08$a3-0365-0567-9 330 $aEmerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as "ultra-wide bandgap" materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III-V, and other compound semiconductor devices and integrated circuits. 517 $aWide Bandgap Based Devices 606 $aTechnology: general issues$2bicssc 610 $a4H-SiC 610 $aactive power filter (APF) 610 $aAESA radars 610 $aAg sinter paste 610 $aAlGaN/GaN 610 $aamorphous InGaZnO 610 $aasymmetric multiple quantum wells 610 $abarrier thickness 610 $abreakdown voltage (BV) 610 $abuffer trapping effect 610 $aburied-channel 610 $acomposition-graded AlxGa1?xN electron blocking layer (EBL) 610 $acopper metallization 610 $acosolvent 610 $adirect bonded copper (DBC) substrate 610 $adistortions 610 $adistributed feedback (DFB) 610 $adouble barrier 610 $aelectrochromism 610 $aelectron leakage 610 $aelectron leakage current 610 $aflexible devices 610 $agallium nitride 610 $agallium nitride (GaN) 610 $aGallium nitride (GaN) high-electron-mobility transistors (HEMTs) 610 $aGaN 610 $aGaN 5G 610 $aGaN laser diode 610 $aGaN-based vertical-cavity surface-emitting laser (VCSEL) 610 $aGaN-on-GaN 610 $agrooved-anode diode 610 $aHEMT 610 $ahierarchical nanostructures 610 $ahigh electron mobility transistors 610 $ahigh electron mobility transistors (HEMT) 610 $ahigh-electron-mobility transistor (HEMT) 610 $ahigh-electron-mobility transistors 610 $ahigh-energy ?-particle detection 610 $aIGBT 610 $aInGaN laser diodes 610 $ajammer system 610 $alow voltage 610 $ametal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) 610 $amillimeter wave 610 $amorphology 610 $an/a 610 $anew radio 610 $anitrogen-doping 610 $anormally off 610 $anormally-off operation 610 $anumerical simulation 610 $aON-state voltage 610 $aoptical absorption loss 610 $aoptical band gap 610 $aoptimization 610 $aphoton extraction efficiency 610 $aphotonic emitter 610 $apolyol method 610 $apower amplifier 610 $apower cycle test 610 $apower quality (PQ) 610 $apower switching device 610 $aproton irradiation 610 $arecessed gate 610 $areliability 610 $aRF front-end 610 $aschottky barrier diodes 610 $aself-align 610 $aSiC micro-heater chip 610 $asidewall gratings 610 $asilver nanoring 610 $asilver nanowire 610 $aspin coating 610 $astability 610 $asurface gratings 610 $aterahertz Gunn diode 610 $athermal resistance 610 $athick depletion width detectors 610 $athin-film transistor 610 $atime-dependent dielectric breakdown (TDDB) 610 $atransmittance 610 $atungsten trioxide film 610 $aturn-off loss 610 $aultra-wide band gap 610 $avertical breakdown voltage 610 $avertical gate structure 610 $awide band gap semiconductors 610 $awide band-gap (WBG) 610 $awide bandgap semiconductors 610 $awide-bandgap semiconductor 610 $awideband 610 $aZnO nanorod/NiO nanosheet 615 7$aTechnology: general issues 700 $aMedjdoub$b Farid$4edt$01296161 702 $aMedjdoub$b Farid$4oth 906 $aBOOK 912 $a9910557351703321 996 $aWide Bandgap Based Devices$93023833 997 $aUNINA LEADER 06064nam 22007455 450 001 9910746964103321 005 20251008150516.0 010 $a9783031340413 010 $a3031340418 024 7 $a10.1007/978-3-031-34041-3 035 $a(PPN)279989938 035 $a(MiAaPQ)EBC30769591 035 $a(Au-PeEL)EBL30769591 035 $a(CKB)28449043400041 035 $a(OCoLC)1402026450 035 $a(DE-He213)978-3-031-34041-3 035 $a(EXLCZ)9928449043400041 100 $a20231003d2023 u| 0 101 0 $aeng 135 $aurcnu|||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aAfrica and the Formation of the New System of International Relations?Vol. II $eBeyond Summit Diplomacy: Cooperation with Africa in the Post-pandemic World /$fedited by Alexey M. Vasiliev, Denis A. Degterev, Timothy M. Shaw 205 $a1st ed. 2023. 210 1$aCham :$cSpringer International Publishing :$cImprint: Springer,$d2023. 215 $a1 online resource (xiv, 377 pages) $cillustrations (chiefly color) 225 1 $aAdvances in African Economic, Social and Political Development,$x2198-7270 311 08$aPrint version: Vasiliev, Alexey M. Africa and the Formation of the New System of International Relations--Vol. II Cham : Springer International Publishing AG,c2023 9783031340406 327 $aChapter 1 African Summitry: Representation of ?External Other? in the ?Power Transit? Era -- Part 1: African Agency in Post-Pandemic World -- Chapter 2: The Interface between Article 4(h) of the Constitutive Act and the African People's Agency: The Role of the AU in Post-Pandemic African Diplomacy -- Chapter 3: The Global Demographic Change and Africa-Asia Relations: Beyond Big Power Summits -- Chapter 4: Post-Covid-19 African Development Challenges in African Think Tanks Studies -- Chapter 5: Cameroon and China Educational Cooperation in the Post-Covid Era: The Case of Chinese Language Teaching and Learning -- Chapter 6: Promotion Strategies for Mitigating the Impact of Covid-19 on Kenya?s Exports -- Chapter 7: Intra-Africa Trade in Services and the AFCFTA -- Chapter 8: Trading African Art at Sotheby's: a Story Told by Lions or Hunters? -- Part 2: Great powers summits on cooperation with Africa -- Chapter 9: Diplomacy on regional and inter-regional Levels: What works, why and for whom? -- Chapter 10: The EU and Turkey?s Development Aid Policies in Sub-Saharan Africa: Unpacking the Similarities and Differences -- Chapter 11: TICAD and FOCAC Summit Diplomacy: Similarities and Differences -- Chapter 12: Beyond Summitry: The Role of Hard and Soft Power in Turkey?s Africa Strategy -- Chapter 13: Decoding of Turkey?s Last Two Decades in Africa -- Part 3: Healthcare cooperation and regional initiatives in Africa -- Chapter 14: Resource flows in D R Congo public health and healthcare in the Covid-19 pandemic -- Chapter 15: China in fight against COVID-19 and its consequences for Africa -- Chapter 16: EU efforts to increase the pandemic preparedness on a global scale before the COVID-19 outbreak -- Chapter 17: India-Africa: development cooperation in healthcare -- Part 4: Conflicts and Political Process Despite COVID Pandemics -- Chapter 18: Managing Conflict and political processes despite COVID-19 -- Chapter 19: The African Union ? United Nations Hybrid Operation in Darfur (UNAMID): Mission Accomplished? -- Chapter 20: The EU Peacekeeping Strategy in Mali: Challenges and Prospects -- Chapter 21: Land Conflicts in Cote d?Ivoire in 1990?s as a Premise for the Civil War -- Chapter 22: The Oromo Revolution: How Has Interethnic Relations Changed in Ethiopia? -- Chapter 23: Conflict Development and African Union Security Management Capacity Challenges. 330 $aIn light of the growing number of African summits and a new awareness of international interdependence during the COVID-19 pandemic, this book provides a comprehensive analysis of the current state of Africa?s international relations (IR). Leading IR scholars from Africa and around the world examine international cooperation with African countries in areas such as health care, education, and peacekeeping and explore how Africa?s role in the system of international relations has changed during the COVID-19 pandemic. The book is divided into four parts, the first of which explores analyzes the various actors that constitute African agency in the post-pandemic world, while the second focuses on the summits of the major powers regarding cooperation with Africa. The third part covers public health cooperation and regional initiatives in Africa, including issues such as vaccine diplomacy, while the fourth and final part discusses conflicts & political process despite COVID Pandemics. 410 0$aAdvances in African Economic, Social and Political Development,$x2198-7270 606 $aInternational relations 606 $aAfrica$xPolitics and government 606 $aRegionalism 606 $aDiplomacy 606 $aEconomic development 606 $aInternational Relations 606 $aAfrican Politics 606 $aForeign Policy 606 $aRegionalism 606 $aDiplomacy 606 $aDevelopment Studies 615 0$aInternational relations. 615 0$aAfrica$xPolitics and government. 615 0$aRegionalism. 615 0$aDiplomacy. 615 0$aEconomic development. 615 14$aInternational Relations. 615 24$aAfrican Politics. 615 24$aForeign Policy. 615 24$aRegionalism. 615 24$aDiplomacy. 615 24$aDevelopment Studies. 676 $a327.600905 700 $aVasiliev$b Alexey M$01431356 701 $aDegterev$b D. A$g(Denis Andreevich)$01431676 701 $aShaw$b Timothy M$0126335 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910746964103321 996 $aAfrica and the Formation of the New System of International Relations?Vol. II$94451355 997 $aUNINA