LEADER 06276nam 2201453z- 450 001 9910557351703321 005 20220111 035 $a(CKB)5400000000042373 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/76339 035 $a(oapen)doab76339 035 $a(EXLCZ)995400000000042373 100 $a20202201d2021 |y 0 101 0 $aeng 135 $aurmn|---annan 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 00$aWide Bandgap Based Devices$eDesign, Fabrication and Applications 210 $aBasel, Switzerland$cMDPI - Multidisciplinary Digital Publishing Institute$d2021 215 $a1 online resource (242 p.) 311 08$a3-0365-0566-0 311 08$a3-0365-0567-9 330 $aEmerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as "ultra-wide bandgap" materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III-V, and other compound semiconductor devices and integrated circuits. 517 $aWide Bandgap Based Devices 606 $aTechnology: general issues$2bicssc 610 $a4H-SiC 610 $aactive power filter (APF) 610 $aAESA radars 610 $aAg sinter paste 610 $aAlGaN/GaN 610 $aamorphous InGaZnO 610 $aasymmetric multiple quantum wells 610 $abarrier thickness 610 $abreakdown voltage (BV) 610 $abuffer trapping effect 610 $aburied-channel 610 $acomposition-graded AlxGa1?xN electron blocking layer (EBL) 610 $acopper metallization 610 $acosolvent 610 $adirect bonded copper (DBC) substrate 610 $adistortions 610 $adistributed feedback (DFB) 610 $adouble barrier 610 $aelectrochromism 610 $aelectron leakage 610 $aelectron leakage current 610 $aflexible devices 610 $agallium nitride 610 $agallium nitride (GaN) 610 $aGallium nitride (GaN) high-electron-mobility transistors (HEMTs) 610 $aGaN 610 $aGaN 5G 610 $aGaN laser diode 610 $aGaN-based vertical-cavity surface-emitting laser (VCSEL) 610 $aGaN-on-GaN 610 $agrooved-anode diode 610 $aHEMT 610 $ahierarchical nanostructures 610 $ahigh electron mobility transistors 610 $ahigh electron mobility transistors (HEMT) 610 $ahigh-electron-mobility transistor (HEMT) 610 $ahigh-electron-mobility transistors 610 $ahigh-energy ?-particle detection 610 $aIGBT 610 $aInGaN laser diodes 610 $ajammer system 610 $alow voltage 610 $ametal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) 610 $amillimeter wave 610 $amorphology 610 $an/a 610 $anew radio 610 $anitrogen-doping 610 $anormally off 610 $anormally-off operation 610 $anumerical simulation 610 $aON-state voltage 610 $aoptical absorption loss 610 $aoptical band gap 610 $aoptimization 610 $aphoton extraction efficiency 610 $aphotonic emitter 610 $apolyol method 610 $apower amplifier 610 $apower cycle test 610 $apower quality (PQ) 610 $apower switching device 610 $aproton irradiation 610 $arecessed gate 610 $areliability 610 $aRF front-end 610 $aschottky barrier diodes 610 $aself-align 610 $aSiC micro-heater chip 610 $asidewall gratings 610 $asilver nanoring 610 $asilver nanowire 610 $aspin coating 610 $astability 610 $asurface gratings 610 $aterahertz Gunn diode 610 $athermal resistance 610 $athick depletion width detectors 610 $athin-film transistor 610 $atime-dependent dielectric breakdown (TDDB) 610 $atransmittance 610 $atungsten trioxide film 610 $aturn-off loss 610 $aultra-wide band gap 610 $avertical breakdown voltage 610 $avertical gate structure 610 $awide band gap semiconductors 610 $awide band-gap (WBG) 610 $awide bandgap semiconductors 610 $awide-bandgap semiconductor 610 $awideband 610 $aZnO nanorod/NiO nanosheet 615 7$aTechnology: general issues 700 $aMedjdoub$b Farid$4edt$01296161 702 $aMedjdoub$b Farid$4oth 906 $aBOOK 912 $a9910557351703321 996 $aWide Bandgap Based Devices$93023833 997 $aUNINA