LEADER 03262 am 2200721 n 450 001 9910324030003321 005 20181221 010 $a2-8028-0364-6 024 7 $a10.4000/books.pusl.6233 035 $a(CKB)4100000008283963 035 $a(FrMaCLE)OB-pusl-6233 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/55882 035 $a(PPN)236710362 035 $a(EXLCZ)994100000008283963 100 $a20190528j|||||||| ||| 0 101 0 $afre 135 $auu||||||m|||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aPéché collectif et responsabilité /$fPierre Watté, Paul Löwenthal, Jacques Vemeylen, Jean Palsterman, Adolphe Gesché, Ignace Berten 210 $aBruxelles $cPresses de l?Université Saint-Louis$d2018 215 $a1 online resource (193 p.) 311 $a2-8028-0048-5 330 $aQuelle dose d?inconscience ne faut-il pas pour oser parler de péché ? Cette notion ne relève-t-elle pas, désormais, de l'archéologie de la conscience humaine ? Et comment parler de péché collectif sans paraître réactiver d'anciens mythes pessimistes dont l'imprécision nourrirait à la fois les torpeurs fatalistes et les excès fanatiques ? La session théologique, organisée dans le cadre de l'École des sciences philosophiques et religieuses des F.U.S.L., en 1985, et, dont ce volume présente les travaux, a voulu affronter ces nouvelles évidences critiques et contribuer à lever les malentendus et les suspicions qui, de points de vue opposés, font de la notion de péché collectif un repoussoir. Et si un recours renouvelé aux textes et mythes fondateurs de notre tradition judéo-chrétienne nous réservait la surprise d'une libération du lien pervers entre responsabilité et culpabilisme ? 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INDIANO - LETTERATURE INDOARIE MINORI - GUJARATI - CRITICA$2A 700 1$aDALAL$bSuresh$3UONV080292$0668661 712 $aSwati Publications$3UONV251816$4650 790 1$aDALALA, Suresha$zDALAL, Suresh$3UONV080293 801 $aIT$bSOL$c20240220$gRICA 899 $aSIBA - SISTEMA BIBLIOTECARIO DI ATENEO$2UONSI 912 $aUON00130504 950 $aSIBA - SISTEMA BIBLIOTECARIO DI ATENEO$dSI SI VI IGA 009 $eSI SA 38901 5 009 996 $aApeksha$91313122 997 $aUNIOR LEADER 06276nam 2201453z- 450 001 9910557351703321 005 20220111 035 $a(CKB)5400000000042373 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/76339 035 $a(oapen)doab76339 035 $a(EXLCZ)995400000000042373 100 $a20202201d2021 |y 0 101 0 $aeng 135 $aurmn|---annan 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 00$aWide Bandgap Based Devices$eDesign, Fabrication and Applications 210 $aBasel, Switzerland$cMDPI - Multidisciplinary Digital Publishing Institute$d2021 215 $a1 online resource (242 p.) 311 08$a3-0365-0566-0 311 08$a3-0365-0567-9 330 $aEmerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as "ultra-wide bandgap" materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. 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