LEADER 06245nam 2201429z- 450 001 9910557351703321 005 20231214133325.0 035 $a(CKB)5400000000042373 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/76339 035 $a(EXLCZ)995400000000042373 100 $a20202201d2021 |y 0 101 0 $aeng 135 $aurmn|---annan 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aWide Bandgap Based Devices$eDesign, Fabrication and Applications 210 $aBasel, Switzerland$cMDPI - Multidisciplinary Digital Publishing Institute$d2021 215 $a1 electronic resource (242 p.) 311 $a3-0365-0566-0 311 $a3-0365-0567-9 330 $aEmerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as ?ultra-wide bandgap? materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III?V, and other compound semiconductor devices and integrated circuits. 517 $aWide Bandgap Based Devices 606 $aTechnology: general issues$2bicssc 610 $aGaN 610 $ahigh-electron-mobility transistor (HEMT) 610 $aultra-wide band gap 610 $aGaN-based vertical-cavity surface-emitting laser (VCSEL) 610 $acomposition-graded AlxGa1?xN electron blocking layer (EBL) 610 $aelectron leakage 610 $aGaN laser diode 610 $adistributed feedback (DFB) 610 $asurface gratings 610 $asidewall gratings 610 $aAlGaN/GaN 610 $aproton irradiation 610 $atime-dependent dielectric breakdown (TDDB) 610 $areliability 610 $anormally off 610 $apower cycle test 610 $aSiC micro-heater chip 610 $adirect bonded copper (DBC) substrate 610 $aAg sinter paste 610 $awide band-gap (WBG) 610 $athermal resistance 610 $aamorphous InGaZnO 610 $athin-film transistor 610 $anitrogen-doping 610 $aburied-channel 610 $astability 610 $a4H-SiC 610 $aturn-off loss 610 $aON-state voltage 610 $abreakdown voltage (BV) 610 $aIGBT 610 $awide-bandgap semiconductor 610 $ahigh electron mobility transistors 610 $avertical gate structure 610 $anormally-off operation 610 $agallium nitride 610 $aasymmetric multiple quantum wells 610 $abarrier thickness 610 $aInGaN laser diodes 610 $aoptical absorption loss 610 $aelectron leakage current 610 $awide band gap semiconductors 610 $anumerical simulation 610 $aterahertz Gunn diode 610 $agrooved-anode diode 610 $aGallium nitride (GaN) high-electron-mobility transistors (HEMTs) 610 $avertical breakdown voltage 610 $abuffer trapping effect 610 $agallium nitride (GaN) 610 $apower switching device 610 $aactive power filter (APF) 610 $apower quality (PQ) 610 $ametal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) 610 $arecessed gate 610 $adouble barrier 610 $ahigh-electron-mobility transistors 610 $acopper metallization 610 $amillimeter wave 610 $awide bandgap semiconductors 610 $aflexible devices 610 $asilver nanoring 610 $asilver nanowire 610 $apolyol method 610 $acosolvent 610 $atungsten trioxide film 610 $aspin coating 610 $aoptical band gap 610 $amorphology 610 $aelectrochromism 610 $aself-align 610 $ahierarchical nanostructures 610 $aZnO nanorod/NiO nanosheet 610 $aphoton extraction efficiency 610 $aphotonic emitter 610 $awideband 610 $aHEMT 610 $apower amplifier 610 $ajammer system 610 $aGaN 5G 610 $ahigh electron mobility transistors (HEMT) 610 $anew radio 610 $aRF front-end 610 $aAESA radars 610 $atransmittance 610 $adistortions 610 $aoptimization 610 $aGaN-on-GaN 610 $aschottky barrier diodes 610 $ahigh-energy ?-particle detection 610 $alow voltage 610 $athick depletion width detectors 615 7$aTechnology: general issues 700 $aMedjdoub$b Farid$4edt$01296161 702 $aMedjdoub$b Farid$4oth 906 $aBOOK 912 $a9910557351703321 996 $aWide Bandgap Based Devices$93023833 997 $aUNINA