LEADER 04276nam 2200865z- 450 001 9910557343303321 005 20220111 035 $a(CKB)5400000000042458 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/77105 035 $a(oapen)doab77105 035 $a(EXLCZ)995400000000042458 100 $a20202201d2021 |y 0 101 0 $aeng 135 $aurmn|---annan 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 00$aMicro- and Nanotechnology of Wide Bandgap Semiconductors 210 $aBasel, Switzerland$cMDPI - Multidisciplinary Digital Publishing Institute$d2021 215 $a1 online resource (114 p.) 311 08$a3-0365-1522-4 311 08$a3-0365-1521-6 330 $aOwing to their unique characteristics, direct wide bandgap energy, large breakdown field, and excellent electron transport properties, including operation at high temperature environments and low sensitivity to ionizing radiation, gallium nitride (GaN) and related group III-nitride heterostructures proved to be enabling materials for advanced optoelectronic and electronic devices and systems. Today, they are widely used in high performing short wavelength light emitting diodes (LEDs) and laser diodes (LDs), high performing radar, wireless telecommunications, as well 'green' power electronics. Impressive progress in GaN technology over the last 25 years has been driven by a continuously growing need for more advanced systems, and still new challenges arise and need to be solved. Actually, lighting industry, RF defene industry, and 5G mmWave telecommunication systems are driving forces for further intense research in order to reach full potential of GaN-based semiconductors. In the literature, there is a number of review papers and publications reporting technology progress and indicating future trends. In this Special Issue of Electronics, eight papers are published, the majority of them focusing materials and process technology of GaN-based devices fabricated on native GaN substrates. The specific topics include: GaN single crystalline substrates for electronic devices by ammonothermal and HVPE methods, Selective - Area Metalorganic Vapour - Phase Epitaxy of GaN and AlGaN/GaN hetereostructures for HEMTs, Advances in Ion Implantation of GaN and Related Materials including high pressure processing (lattice reconstruction) of ion implanted GaN (Mg and Be) and III-Nitride Nanowires for electronic and optoelectronic devices. 606 $aTechnology: general issues$2bicssc 610 $aAlGaN 610 $aAlGaN/GaN 610 $aAlGaN/GaN heterostructures 610 $aAlN 610 $aammonothermal method 610 $aconductance-frequency 610 $acrystal growth 610 $adiffusion 610 $adiffusion coefficients 610 $aedge effects 610 $aeffective diffusion length 610 $agallium nitride 610 $agallium nitride nanowires 610 $aGaN 610 $aGaN HEMT 610 $agrowth polarity 610 $aHVPE 610 $ainterface state density 610 $aion implantation 610 $aKelvin probe force microscopy 610 $alaser diode 610 $aLEDs 610 $aLTE 610 $amicrowave power amplifier 610 $aMISHEMT 610 $amolecular beam epitaxy 610 $aMOVPE 610 $an/a 610 $ananowires 610 $anitrides 610 $apolarity 610 $aselective area growth 610 $aselective epitaxy 610 $aself-heating effect 610 $athermal equivalent circuit 610 $athermal impedance 610 $athermal time constant 610 $athermodynamics 610 $atunnel junction 610 $aultra-high-pressure annealing 615 7$aTechnology: general issues 700 $aPiotrowska$b Anna B$4edt$01290177 702 $aKamin?ska$b Eliana$4edt 702 $aWojtasiak$b Wojciech$4edt 702 $aPiotrowska$b Anna B$4oth 702 $aKamin?ska$b Eliana$4oth 702 $aWojtasiak$b Wojciech$4oth 906 $aBOOK 912 $a9910557343303321 996 $aMicro- and Nanotechnology of Wide Bandgap Semiconductors$93021392 997 $aUNINA