LEADER 04070nam 2200769z- 450 001 9910557326803321 005 20210501 035 $a(CKB)5400000000042611 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/68298 035 $a(oapen)doab68298 035 $a(EXLCZ)995400000000042611 100 $a20202105d2021 |y 0 101 0 $aeng 135 $aurmn|---annan 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 00$aMiniaturized Silicon Photodetectors$eNew Perspectives and Applications 210 $aBasel, Switzerland$cMDPI - Multidisciplinary Digital Publishing Institute$d2021 215 $a1 online resource (148 p.) 311 08$a3-0365-0044-8 311 08$a3-0365-0045-6 330 $aSilicon (Si) technologies provide an excellent platform for the design of microsystems where photonic and microelectronic functionalities are monolithically integrated on the same substrate. In recent years, a variety of passive and active Si photonic devices have been developed, and among them, photodetectors have attracted particular interest from the scientific community. Si photodiodes are typically designed to operate at visible wavelengths, but, unfortunately, their employment in the infrared (IR) range is limited due to the neglectable Si absorption over 1100 nm, even though the use of germanium (Ge) grown on Si has historically allowed operations to be extended up to 1550 nm. In recent years, significant progress has been achieved both by improving the performance of Si-based photodetectors in the visible range and by extending their operation to infrared wavelengths. Near-infrared (NIR) SiGe photodetectors have been demonstrated to have a "zero change" CMOS process flow, while the investigation of new effects and structures has shown that an all-Si approach could be a viable option to construct devices comparable with Ge technology. In addition, the capability to integrate new emerging 2D and 3D materials with Si, together with the capability of manufacturing devices at the nanometric scale, has led to the development of new device families with unexpected performance. Accordingly, this Special Issue of Micromachines seeks to showcase research papers, short communications, and review articles that show the most recent advances in the field of silicon photodetectors and their respective applications. 517 $aMiniaturized Silicon Photodetectors 606 $aTechnology: general issues$2bicssc 610 $a1/f noise 610 $a3.3 V/0.35 µm complementary metal-oxide-semiconductor (CMOS) 610 $aavalanche photodiode (APD) 610 $aavalanche transients 610 $aC/Si ratios 610 $acolloidal systems 610 $acomplementary metal oxide semiconductor (CMOS)-compatible 610 $agating 610 $aGeSn alloys 610 $agraphene 610 $agroup IV 610 $ahigh dynamic range (HDR) image 610 $aimpact ionization coefficients 610 $ainfrared focal plane array (IRFPA) 610 $amicrobolometer 610 $amicrophotonics 610 $an/a 610 $anear-infrared 610 $aNi/4H-SiC Schottky barrier diodes (SBDs) 610 $ap-Si/i-ZnO/n-AZO 610 $aphotodetector 610 $aphotodetectors 610 $aphotodiode 610 $aphotonic integrated circuits 610 $aphototransistor 610 $apixel 610 $apolycrystalline silicon 610 $aread-out integrated circuit (ROIC) 610 $aresonant cavity 610 $asemiconductor 610 $asilicon 610 $asilicon photonics 610 $asingle-photon avalanche diode (SPAD) 610 $athermal detectors 610 $auncooled infrared detectors 615 7$aTechnology: general issues 700 $aCasalino$b Maurizio$4edt$01318439 702 $aCasalino$b Maurizio$4oth 906 $aBOOK 912 $a9910557326803321 996 $aMiniaturized Silicon Photodetectors$93033249 997 $aUNINA