LEADER 04092nam 2201021z- 450 001 9910557292403321 005 20231214133529.0 035 $a(CKB)5400000000041115 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/68821 035 $a(EXLCZ)995400000000041115 100 $a20202105d2020 |y 0 101 0 $aeng 135 $aurmn|---annan 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aPreparation and Properties of 2D Materials 210 $aBasel, Switzerland$cMDPI - Multidisciplinary Digital Publishing Institute$d2020 215 $a1 electronic resource (142 p.) 311 $a3-03936-258-5 311 $a3-03936-259-3 330 $aSince the great success of graphene, atomically thin-layered nanomaterials, called two dimensional (2D) materials, have attracted tremendous attention due to their extraordinary physical properties. Specifically, van der Waals heterostructured architectures based on a few 2D materials, named atomic-scale Lego, have been proposed as unprecedented platforms for the implementation of versatile devices with a completely novel function or extremely high-performance, shifting the research paradigm in materials science and engineering. Thus, diverse 2D materials beyond existing bulk materials have been widely studied for promising electronic, optoelectronic, mechanical, and thermoelectric applications. Especially, this Special Issue included the recent advances in the unique preparation methods such as exfoliation-based synthesis and vacuum-based deposition of diverse 2D materials and also their device applications based on interesting physical properties. Specifically, this Editorial consists of the following two parts: Preparation methods of 2D materials and Properties of 2D materials 606 $aHistory of engineering & technology$2bicssc 610 $a?-MoO3 610 $acarbon nitride 610 $ag-C3N4 610 $amolybdenum trioxide 610 $ananoplates 610 $asynthesis 610 $afew-layer MoS2 610 $amagnetron sputtering 610 $amagnetron sputtering power 610 $araman spectroscopy 610 $adisorder 610 $aV2Se9 610 $aatomic crystal 610 $amechanical exfoliation 610 $ascanning Kelvin probe microscopy 610 $aMoS2 610 $ablack phosphorus 610 $a2D/2D heterojunction 610 $ajunction FET 610 $atunneling diode 610 $atunneling FET 610 $aband-to-band tunneling (BTBT) 610 $anatural molybdenite 610 $aMoS2 nanosheet 610 $aSiO2 610 $aliquid exfoliation 610 $aphotoelectric properties 610 $auniaxial strain 610 $aflexible substrate 610 $afilm-substrate interaction 610 $aphotoluminescence 610 $aRaman spectroscopy 610 $amolybdenum disulfide 610 $abilayer-stacked structure 610 $aWS2 610 $alubricant additives 610 $atribological properties 610 $ainterfacial layer 610 $acontact resistance 610 $abias stress stability 610 $asaturable absorbers 610 $aLangmuir-Blodgett technique 610 $aQ-switched laser 610 $achemical vapor deposition 610 $aP2O5 610 $ap-type conduction 610 $aP-doped MoS2 610 $atransition metal dichalcogenides 610 $atwo-dimensional materials 610 $aferroelectrics 610 $a2D heterostructure 610 $aWSe2 610 $aNbSe2 610 $aNb2O5 interlayer 610 $asynapse device 610 $aneuromorphic system 615 7$aHistory of engineering & technology 700 $aCho$b Byungjin$4edt$01311322 702 $aKim$b Yonghun$4edt 702 $aCho$b Byungjin$4oth 702 $aKim$b Yonghun$4oth 906 $aBOOK 912 $a9910557292403321 996 $aPreparation and Properties of 2D Materials$93030243 997 $aUNINA