LEADER 02052nam 2200469z- 450 001 9910557208003321 005 20211118 035 $a(CKB)5400000000041866 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/73491 035 $a(oapen)doab73491 035 $a(EXLCZ)995400000000041866 100 $a20202111d2020 |y 0 101 0 $aeng 135 $aurmn|---annan 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 00$aUnderstanding and Exploiting Host-Commensal Interactions to Combat Pathogens 210 $cFrontiers Media SA$d2020 215 $a1 online resource (195 p.) 311 08$a2-88963-336-5 330 $aThis eBook is a collection of articles from a Frontiers Research Topic. Frontiers Research Topics are very popular trademarks of the Frontiers Journals Series: they are collections of at least ten articles, all centered on a particular subject. With their unique mix of varied contributions from Original Research to Review Articles, Frontiers Research Topics unify the most influential researchers, the latest key findings and historical advances in a hot research area! Find out more on how to host your own Frontiers Research Topic or contribute to one as an author by contacting the Frontiers Editorial Office: frontiersin.org/about/contact 606 $aImmunology$2bicssc 606 $aMedicine and Nursing$2bicssc 610 $aCommensal 610 $aHost 610 $aImmunity 610 $aPathogen 610 $aTherapeutics 610 $aVaccine 615 7$aImmunology 615 7$aMedicine and Nursing 700 $aShekhar$b Sudhanshu$4edt$01287831 702 $aCristina Petersen$b Fernanda$4edt 702 $aYang$b Xi$4edt 702 $aShekhar$b Sudhanshu$4oth 702 $aCristina Petersen$b Fernanda$4oth 702 $aYang$b Xi$4oth 906 $aBOOK 912 $a9910557208003321 996 $aUnderstanding and Exploiting Host-Commensal Interactions to Combat Pathogens$93020459 997 $aUNINA LEADER 04416nam 22011053a 450 001 9910346846903321 005 20250203235425.0 010 $a9783038978435 010 $a3038978434 024 8 $a10.3390/books978-3-03897-843-5 035 $a(CKB)4920000000095171 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/62681 035 $a(ScCtBLL)fcbb4138-0db0-4784-805b-30044cdbd29a 035 $a(OCoLC)1126143472 035 $a(oapen)doab62681 035 $a(EXLCZ)994920000000095171 100 $a20250203i20192019 uu 101 0 $aeng 135 $aurmn|---annan 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 00$aWide Bandgap Semiconductor Based Micro/Nano Devices$fJung-Hun Seo 210 $cMDPI - Multidisciplinary Digital Publishing Institute$d2019 210 1$aBasel, Switzerland :$cMDPI,$d2019. 215 $a1 electronic resource (138 p.) 311 08$a9783038978428 311 08$a3038978426 330 $aWhile group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices. 606 $aHistory of engineering and technology$2bicssc 610 $aohmic contact 610 $aMESFET 610 $aoptical band gap 610 $awide-bandgap semiconductor 610 $aannealing temperature 610 $ajunction termination extension (JTE) 610 $achannel length modulation 610 $asilicon carbide (SiC) 610 $aamorphous InGaZnO (a-IGZO) 610 $alight output power 610 $aGaN 610 $aelectrochromism 610 $alarge signal performance 610 $apassivation layer 610 $a4H-SiC 610 $apositive gate bias stress (PGBS) 610 $aasymmetric power combining 610 $aultrahigh upper gate height 610 $ahigh electron mobility transistors 610 $aspace application 610 $agallium nitride (GaN) 610 $aphase balance 610 $aedge termination 610 $adistributed Bragg reflector 610 $acathode field plate (CFP) 610 $aammonothermal GaN 610 $aanode field plate (AFP) 610 $aW band 610 $aGaN high electron mobility transistor (HEMT) 610 $a1T DRAM 610 $agrowth of GaN 610 $atungsten trioxide film 610 $athin-film transistor (TFT) 610 $amicron-sized patterned sapphire substrate 610 $apower added efficiency 610 $aT-anode 610 $aanalytical model 610 $aAlGaN/GaN 610 $aharsh environment 610 $ahigh-temperature operation 610 $aamplitude balance 610 $abuffer layer 610 $acharacteristic length 610 $aKu-band 610 $aDIBL effect 610 $aI-V kink effect 610 $aflip-chip light-emitting diodes 610 $ahigh electron mobility transistors (HEMTs) 610 $apower amplifier 610 $asidewall GaN 610 $aexternal quantum efficiency 610 $abreakdown voltage (BV) 610 $athreshold voltage (Vth) stability 610 $aregrown contact 610 $aAlGaN/GaN HEMT 610 $aTCAD 610 $ahigh electron mobility transistor (HEMT) 615 7$aHistory of engineering and technology 700 $aSeo$b Jung-Hun$01329320 801 0$bScCtBLL 801 1$bScCtBLL 906 $aBOOK 912 $a9910346846903321 996 $aWide Bandgap Semiconductor Based Micro$93039421 997 $aUNINA