LEADER 04355nam 2200745z- 450 001 9910557142603321 005 20231214133022.0 035 $a(CKB)5400000000040632 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/68267 035 $a(EXLCZ)995400000000040632 100 $a20202105d2021 |y 0 101 0 $aeng 135 $aurmn|---annan 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aHigh-Efficiency Crystalline Silicon Solar Cells 210 $aBasel, Switzerland$cMDPI - Multidisciplinary Digital Publishing Institute$d2021 215 $a1 electronic resource (90 p.) 311 $a3-03943-629-5 311 $a3-03943-630-9 330 $aThis book is composed of 6 papers. The first paper reports a novel technique for the selective emitter formation by controlling the surface morphology of Si wafers. Selective emitter (SE) technology has attracted renewed attention in the Si solar cell industry to achieve an improved conversion efficiency of passivated-emitter rear-contact (PERC) cells. In the second paper, the temperature dependence of the parameters was compared through the PERC of the industrial-scale solar cells. As a result of their analysis, PERC cells showed different temperature dependence for the fill factor loss as temperatures rose. The third paper reports the effects of carrier selective front contact layer and defect state of hydrogenated amorphous silicon passivation layer/n-type crystalline silicon interface. The results demonstrated the effects of band offset determined by band bending at the interface of the passivation layer and carrier selective front contact layer. In addition, the nc-SiOx: H CSFC layer not only reduces parasitic absorption loss but also has a tunneling effect and field-effect passivation. The fourth paper reports excimer laser annealing of hydrogenated amorphous silicon film for TOPCon solar cell application. This paper analyzes the crystallization of a-Si:H via excimer laser annealing (ELA) and compared this process with conventional thermal annealing. The fifth paper reports the contact mechanism between Ag?Al and Si and the change in contact resistance (Rc) by varying the firing profile. Rc was measured by varying the belt speed and peak temperature of the fast-firing furnace. The sixth paper reports a silicon tandem heterojunction solar cell based on a ZnO/Cu2O subcell and a c-Si bottom subcell using electro-optical numerical modeling. The buffer layer affinity and mobility together with a low conduction band offset for the heterojunction are discussed, as well as spectral properties of the device model. 606 $aHistory of engineering & technology$2bicssc 610 $afill factor loss analysis 610 $adouble-diode model 610 $aPERC 610 $atemperature dependence 610 $arecombination current density 610 $aparasitic resistance 610 $acarrier selective contact 610 $arear emitter heterojunction 610 $apassivation 610 $acrystallinity 610 $athermal annealing 610 $aexcimer laser annealing 610 $aamorphous hydrogenated silicon film 610 $ametallization 610 $acontact formation 610 $aAg/Al paste 610 $ap+ emitter 610 $aN-type bifacial solar cells 610 $asilicon tandem heterojunction solar cell 610 $aN-doped Cu2O absorber layer 610 $aAl:ZnO (AZO) 610 $anumerical electro-optical modeling 610 $ascanning electron microscopy (SEM) 610 $aatomic force microscopy (AFM) 610 $aX-ray diffraction (XRD) 610 $aspectroscopic ellipsometry (SE) 610 $aFourier-transform infrared (FTIR) spectroscopy 610 $adegradation degree 610 $afailure rate 610 $aselective emitter 610 $asurface morphology 610 $adoping process 610 $asolar cell 615 7$aHistory of engineering & technology 700 $aCho$b Eun-Chel$4edt$01328657 702 $aLee$b Hae-Seok$4edt 702 $aCho$b Eun-Chel$4oth 702 $aLee$b Hae-Seok$4oth 906 $aBOOK 912 $a9910557142603321 996 $aHigh-Efficiency Crystalline Silicon Solar Cells$93038787 997 $aUNINA