LEADER 01636nam 2200457 450 001 9910523725103321 005 20220905190514.0 010 $a9783030777302$b(electronic bk.) 010 $z9783030777296 035 $a(MiAaPQ)EBC6838629 035 $a(Au-PeEL)EBL6838629 035 $a(CKB)20275208800041 035 $a(OCoLC)1291314772 035 $a(PPN)25938934X 035 $a(EXLCZ)9920275208800041 100 $a20220905d2022 uy 0 101 0 $aeng 135 $aurcnu|||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aAdvanced SPICE model for GaN HEMTs (ASM-HEMT) $ea new industry-standard compact model for GaN-based power and RF circuit design /$fSourabh Khandelwal 210 1$aCham, Switzerland :$cSpringer,$d[2022] 210 4$dİ2022 215 $a1 online resource (194 pages) 311 08$aPrint version: Khandelwal, Sourabh Advanced SPICE Model for GaN HEMTs (ASM-HEMT) Cham : Springer International Publishing AG,c2021 9783030777296 320 $aIncludes bibliographical references and index. 606 $aModulation-doped field-effect transistors 606 $aRadio frequency integrated circuits 606 $aSemiconductors 615 0$aModulation-doped field-effect transistors. 615 0$aRadio frequency integrated circuits. 615 0$aSemiconductors. 676 $a621.3815284 700 $aKhandelwal$b Sourabh$01077178 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 912 $a9910523725103321 996 $aAdvanced SPICE Model for GaN HEMTs (ASM-HEMT)$92588558 997 $aUNINA