LEADER 01177nam  2200373   450 
001 9910467763003321
010   $a3-8325-9478-7
035   $a(CKB)4340000000244390
035   $a(MiAaPQ)EBC5247140
035   $a(EXLCZ)994340000000244390
100   $a20180509d2015      uy             0
101 0 $aeng
135   $aurcnu||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aElectrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films /$fEkaterina Yurchuk
210  1$aBerlin :$cLogos Verlag,$d[2015]
215   $a1 online resource (x, 170 pages)
311   $a3-8325-4003-2 
606   $aHafnium
606   $aFerroelectric crystals
608   $aElectronic books.
615  0$aHafnium.
615  0$aFerroelectric crystals.
676   $a661.0514
700   $aYurchuk$b Ekaterina$0978410
801  0$bMiAaPQ
801  1$bMiAaPQ
801  2$bMiAaPQ
906   $aBOOK
912   $a9910467763003321
996   $aElectrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films$92229711
997   $aUNINA