LEADER 05447nam 22006371 450 001 9910464874003321 005 20200520144314.0 010 $a3-03826-205-6 035 $a(CKB)3710000000074211 035 $a(EBL)1910386 035 $a(SSID)ssj0001192310 035 $a(PQKBManifestationID)11627421 035 $a(PQKBTitleCode)TC0001192310 035 $a(PQKBWorkID)11227925 035 $a(PQKB)10816365 035 $a(MiAaPQ)EBC3038145 035 $a(Au-PeEL)EBL3038145 035 $a(CaPaEBR)ebr10803668 035 $a(OCoLC)868672758 035 $a(EXLCZ)993710000000074211 100 $a20111115h20142014 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aGettering and defect engineering in semiconductor technology XV $eselected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference (GADEST 2013), September 22-27, 2013, Oxford, UK /$fedited by J.D. Murphy 210 1$aDurnten-Zurich, Switzerland :$cTrans Tech Publications,$d[2014] 210 4$dİ2014 215 $a1 online resource (513 p.) 225 1 $aSolid state phenomena ;$v205-206 300 $aDescription based upon print version of record. 311 $a3-03785-824-9 320 $aIncludes bibliographical references and index. 327 $aGettering and Defect Engineering in Semiconductor Technology XV; Preface, Committees, Invited Speakers and Sponsor; Table of Contents; I. Defect Engineering in Silicon Solar Cells; Light-Induced Boron-Oxygen Recombination Centres in Silicon: Understanding their Formation and Elimination; Iron Management in Multicrystalline Silicon through Predictive Simulation: Point Defects, Precipitates, and Structural Defect Interactions; External and Internal Gettering of Interstitial Iron in Silicon for Solar Cells; Precipitation of Interstitial Iron in Multicrystalline Silicon 327 $aDirect Observation of Carrier Trapping Processes on Fe Impurities in mc-Si Solar CellsOn the Trade-Off between Industrially Feasible Silicon Surface Preconditioning Prior to Interface Passivation and Iron Contaminant Removal Effectiveness; II. Structural and Production Issues in Cast Silicon Materials for Solar Cells; Defect Generation and Propagation in Mc-Si Ingots: Influence on the Performance of Solar Cells; Characterisation of Dislocation-Content in Multicrystalline-Silicon Wafers 327 $aThe Impact of Dislocation Structure on Impurity Decoration of Dislocation Clusters in Multicrystalline SiliconAnalysis of Inhomogeneous Dislocation Distribution in Multicrystalline Si; Properties of Strong Luminescence at 0.93 eV in Solar Grade Silicon; 10 cm Diameter Mono Cast Si Growth and its Characterization; Characterization of Residual Strain in Si Ingots Grown by the Seed-Cast Method; III. Characterisation of Silicon for Solar Cells; Overview and Latest Developments in Photoconductance Lifetime Measurements in Silicon 327 $aEfficiency-Limiting Recombination in Multicrystalline Silicon Solar CellsPhotoluminescence Imaging of Silicon Bricks; Inline PL Inspection and Advanced Offline Evaluation of Passivation Defects, Charge and Interfaces; Transition Metal Precipitates in Mc Si: A New Detection Method Using 3D-FIB; A Comparison of EBIC, LBIC and XBIC Methods as Tools for Multicrystalline Si Characterization; IV. Intrinsic Point Defects in Silicon; Properties of Point Defects in Silicon: New Results after a Long-Time Debate; Fast and Slow Vacancies in Silicon 327 $aTheoretical Study of the Impact of Stress on the Behavior of Intrinsic Point Defects in Large-Diameter Defect-Free Si CrystalsV. Light Impurities in Silicon-Based Materials; First Principle Study of the Diffusion of Oxygen and Oxygen Complexes in Si, SiGe Solid Solutions and Si Nanocrystals; The Trivacancy and Trivacancy-Oxygen Family of Defects in Silicon; Monoisotopic 28Si in Spin Resonance Spectroscopy of Electrons Localized on Shallow Donors; Light-Element Impurities and their Reactions in Multicrystalline Si; Isotope-Dependent Phonon Trapping at Defects in Semiconductors 327 $aFormation of Single and Double Donor States of Trivacancy-Oxygen Complexes in P-Type Silicon 330 $aThe book includes both fundamental and technological aspects of defects in semiconductor materials and devices, including photovoltaics. The 74 papers are grouped as follows: I. Defect engineering in silicon solar cells; II. Structural and production issues in cast silicon materials for solar cells; III. Characterisation of silicon for solar cells; IV. Intrinsic point defects in silicon; V. Light impurities in silicon-based materials; VI. Metals in silicon: fundamental properties and gettering; VII. Extended and implantation-related defects in silicon; VIII. Surfaces, passivation and processin 410 0$aDiffusion and defect data.$nPt. B,$pSolid state phenomena ;$vv. 205-206. 606 $aSemiconductors$vCongresses 606 $aSolid state electronics$vCongresses 608 $aElectronic books. 615 0$aSemiconductors 615 0$aSolid state electronics 676 $a620.112972 701 $aMurphy$b J. David$0966984 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910464874003321 996 $aGettering and defect engineering in semiconductor technology XV$92195150 997 $aUNINA