LEADER 05234nam 22006494a 450 001 9910458440603321 005 20200520144314.0 010 $a981-277-806-3 035 $a(CKB)1000000000400552 035 $a(EBL)1679439 035 $a(OCoLC)879074114 035 $a(SSID)ssj0000217323 035 $a(PQKBManifestationID)11191091 035 $a(PQKBTitleCode)TC0000217323 035 $a(PQKBWorkID)10203173 035 $a(PQKB)10343425 035 $a(MiAaPQ)EBC1679439 035 $a(WSP)00004880 035 $a(Au-PeEL)EBL1679439 035 $a(CaPaEBR)ebr10201190 035 $a(CaONFJC)MIL505435 035 $a(EXLCZ)991000000000400552 100 $a20020514d2002 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 00$aOxide reliability$b[electronic resource] $ea summary of silicon oxide wearout, breakdown, and reliability /$feditor, D.J. Dumin 210 $a[River Edge, NJ] $cWorld Scientific$dc2002 215 $a1 online resource (281 p.) 225 1 $aSelected topics in electronics and systems ;$vv. 23 300 $aDescription based upon print version of record. 311 $a981-02-4842-3 320 $aIncludes bibliographical references. 327 $aCONTENTS ; Foreword ; Oxide Wearout, Breakdown, and Reliability; 1. Introduction ; 2. Oxide Breakdown ; 3. Oxide Leakage Currents ; 4. Oxide Trap Generation ; 5. Statistics of Wearout and Breakdown ; 6. Reliability ; 7. Summary ; Reliability of Flash Nonvolatile Memories ; 1. Introduction 327 $a2. Implications to Scaling and Reliability 3. Dielectric Damage Caused by Program/Erase Cycling ; 4. Overerase Effects ; 5. Stress Induced Leakage Current and Post-Cycling Data Retention ; 6 Other Failure Mechanisms ; 7. Conclusions ; Physics and Chemistry of Intrinsic Time-Dependent Dielectric Breakdown in SiO2 Dielectrics 327 $a1. Introduction 2. Time-Dependent Dielectric Breakdown ; 3. Chemistry and Physics of Amorphous SiO2 ; 4. Molecular Models for Dielectric Degradation ; 5. Electron and Hole Injection into SiO2 ; 6. Role of Hole Capture in TDDB ; 7. Complementary Model for TDDB 327 $a8. Conditions Under Which the E and 1/E Models are Valid 9. Extention of the Complementary Model to Hyper-Thin SiO2; 10. Summary ; Breakdown Modes and Breakdown Statistics of Ultrathin SiO2 Gate Oxides; 1. Introduction ; 2. Breakdown related to the generation of oxide defects ; 3. Modeling the Breakdown Statistics 327 $a4. Breakdown modes: Soft breakdown and Hard Breakdown 5. Breakdown effectiveness, energy dissipation and device failure; 6. Conclusions ; MOSFET Gate Oxide Reliability: Anode Hole Injection Model and Its Applications ; 1. Introduction ; 2. Development of the Anode Hole Injection Model ; 3. Recent Developments 327 $a4. Gross-Defect Related Breakdown and Burn-in Model 330 $a This book presents in summary the state of our knowledge of oxide reliability. The articles have been written by experts who are among the most knowledgeable in the field. The book will be an invaluable aid to reliability engineers and manufacturing engineers, helping them to produce and characterize reliable oxides. It can be used as an introduction for new engineers interested in oxide reliability, besides being a reference for engineers already engaged in the field.
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