LEADER 01898nam 2200589 a 450 001 9910456077003321 005 20200520144314.0 010 $a1-280-19276-3 010 $a9786610192762 010 $a0-309-59653-X 010 $a0-585-08469-6 035 $a(CKB)110986584751674 035 $a(OCoLC)614702456 035 $a(CaPaEBR)ebrary10056927 035 $a(SSID)ssj0000198972 035 $a(PQKBManifestationID)11180609 035 $a(PQKBTitleCode)TC0000198972 035 $a(PQKBWorkID)10184299 035 $a(PQKB)10508762 035 $a(MiAaPQ)EBC3376651 035 $a(Au-PeEL)EBL3376651 035 $a(CaPaEBR)ebr10056927 035 $a(CaONFJC)MIL19276 035 $a(OCoLC)923265287 035 $a(EXLCZ)99110986584751674 100 $a19950905d1995 uy 0 101 0 $aeng 135 $aurcn||||||||| 181 $ctxt 182 $cc 183 $acr 200 00$aMaterials for high-temperature semiconductor devices$b[electronic resource] /$fCommittee on Materials for High-Temperature Semiconductor Devices, National Materials Advisory Board, Commission on Engineering and Technical Systems, National Research Council 210 $aWashington, D.C. $cNational Academy Press$dc1995 215 $a1 online resource (135 p.) 300 $a"NMAB-474." 311 $a0-309-05335-8 320 $aIncludes bibliographical references. 606 $aSemiconductors 606 $aMaterials at high temperatures 606 $aWide gap semiconductors 608 $aElectronic books. 615 0$aSemiconductors. 615 0$aMaterials at high temperatures. 615 0$aWide gap semiconductors. 676 $a621.381/2 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910456077003321 996 $aMaterials for high-temperature semiconductor devices$92007566 997 $aUNINA