LEADER 05881nam 2200745 a 450 001 9910455567803321 005 20200520144314.0 010 $a1-282-76159-5 010 $a9786612761591 010 $a981-4287-87-3 035 $a(CKB)2490000000001750 035 $a(EBL)1679447 035 $a(OCoLC)768253530 035 $a(SSID)ssj0000411013 035 $a(PQKBManifestationID)12156759 035 $a(PQKBTitleCode)TC0000411013 035 $a(PQKBWorkID)10352723 035 $a(PQKB)10827363 035 $a(MiAaPQ)EBC1679447 035 $a(WSP)00000683 035 $a(Au-PeEL)EBL1679447 035 $a(CaPaEBR)ebr10422511 035 $a(CaONFJC)MIL276159 035 $a(EXLCZ)992490000000001750 100 $a20100524d2010 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aAdvanced high speed devices$b[electronic resource] /$feditors, Michael S. Shur, Paul Maki 210 $aHackensack, N.J. $cWorld Scientific$d2010 215 $a1 online resource (203 p.) 225 1 $aSelected topics in electronics and systems ;$vv. 51 300 $a"This volume contains the proceedings of the 2008 biennial Lester Eastman Conference (LEC), which was held on the Cornell University of Delaware campus on August 5-7, 2008. Conference was known as IEEE/Cornell University Confernce on High Performance Devices."-- Preface. 311 $a981-4287-86-5 320 $aIncludes bibliographical references. 327 $aCONTENTS; Preface; Simulation and Experimental Results on GaN Based Ultra-Short Planar Negative Di.erential Conductivity Diodes for THz Power Generation B. Aslan, L. F. Eastman and Q. Diduck; 1. Introduction; 2. Simulation Results; 3. Experimental results and discussion; 4. Conclusion; References; 5-Terminal THz GaN Based Transistor with Field- and Space-Charge Control Electrodes G. Simin, M. S. Shur and R. Gaska; 1. Introduction; 2. GaN Heterostructure Field-Effect Transistors; 3. Proposed novel five-terminal GaN based THz HFET; 4. Acknowledgement; References 327 $aPerformance Comparison of Scaled III-V and Si Ballistic Nanowire MOSFETs L. Wang, B. Yu, P. M. Asbeck, Y. Taur and M. Rodwell1. Introduction; 2. Numerical Simulation; 3. Analysis and Discussion; 4. Conclusions; 5. Acknowledgement; References; A Room Temperature Ballistic Deflection Transistor for High Performance Applications Q. Diduck, H. Irie and M. Margala; 1. Introduction; 2. Background; 3. Theory of Operation; 4. Experiments and Results; 5. Conclusion; Acknowledgments; References 327 $aEmission and Intensity Modulation of Terahertz Electromagnetic Radiation Utilizing 2-Dimensional Plasmons in Dual-Grating-Gate HEMT's T. Otsuji, T. Nishimura, Y. Tsuda, Y. M. Meziani, T. Suemitsu and E. Sano1. Introduction; 2. Plasmon-Resonant Terahertz Emitter; 2.1. Device structure and operation principle; 2.2. Characteristic parameters and design scheme; 2.3. Device fabrication; 2.4. Experimental Results and Discussions; 2.4.1. DC-current-driven self oscillation; 2.4.2. CW-pumped optically excited stimulated terahertz emission 327 $a2.4.3. Two-photon injection-locked difference-frequency terahertz emission2.4.4. Impulsive laser excited terahertz emission; 3. Terahertz Intensity Modulator Based on Controlling 2D Plasmon Dispersion; 4. Conclusion; Acknowledgements; References; Millimeter Wave to Terahertz in CMOS K. K. O, S. Sankaran, C. Cao, E.-Y. Seok, D. Shim, C. Mao and R. Han; 1. Introduction; 2. Transistors and Diodes in CMOS; 2.1. Speed Performance of NMOS Transistor; 2.2. Schottky Diode and Other devices for THz detection; 3. Signal Sources; 3.1. A. Fundamental Mode VCO; 3.2. Push-Push VCO; 3.3. Phase Locked Loop 327 $a4. Detector Circuits5. Conclusions; 6. Acknowledgments; References; The Effects of Increasing AlN Mole Fraction on the Performance of AlGaN Active Regions Containing Nanometer Scale Compositionally Inhomogeneities A. V. Sampath, M. L. Reed, C. Moe, G. A. Garrett, E. D. Readinger, W. L. Sarney, H. Shen, M. Wraback, C. Ch; 1. Introduction; 2. Method; 3. Results; 3.1. Temperature dependent cw-Pl studies; 3.2. Time resolved photoluminescence studies; 3.3. Transmission electron microscopy studies; 3.4. 290 nm Double Heterostructure Ultraviolet Light Emitting Diodes; 4. Discussion; 5. Conclusions 327 $a6. Acknowledgements 330 $aAdvanced High Speed Devices covers five areas of advanced device technology : terahertz and high speed electronics, ultraviolet emitters and detectors, advanced III-V field effect transistors, III-N materials and devices, and SiC devices. These emerging areas have attracted a lot of attention and the up-to-date results presented in the book will be of interest to most device and electronics engineers and scientists. The contributors range from prominent academics, such as Professor Lester Eastman, to key US Government scientists, such as Dr Michael Wraback. 410 0$aSelected topics in electronics and systems ;$vv. 51. 606 $aVery high speed integrated circuits$vCongresses 606 $aSemiconductors$vCongresses 606 $aTransistors$vCongresses 606 $aIntegrated circuits$xVery large scale integration$vCongresses 608 $aElectronic books. 615 0$aVery high speed integrated circuits 615 0$aSemiconductors 615 0$aTransistors 615 0$aIntegrated circuits$xVery large scale integration 676 $a621.3815 701 $aShur$b Michael S$0954154 701 $aMaki$b Paul$0954155 712 12$aIEEE/Cornell Conference on High Performance Devices$f(2008 :$eCornell University) 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910455567803321 996 $aAdvanced high speed devices$92157998 997 $aUNINA