LEADER 01568nam  2200517 a 450 
001 9910453045003321
005 20200520144314.0
010   $a1-61761-545-5
035   $a(CKB)2550000001042935
035   $a(EBL)3020958
035   $a(SSID)ssj0000874432
035   $a(PQKBManifestationID)12418611
035   $a(PQKBTitleCode)TC0000874432
035   $a(PQKBWorkID)10887263
035   $a(PQKB)11501624
035   $a(MiAaPQ)EBC3020958
035   $a(Au-PeEL)EBL3020958
035   $a(CaPaEBR)ebr10681096
035   $a(OCoLC)833300441
035   $a(EXLCZ)992550000001042935
100   $a20100803d2011      uy             0
101 0 $aeng
135   $aur|n|---|||||
181   $ctxt
182   $cc
183   $acr
200 00$aCMOS technology$b[electronic resource] /$fMin-jun Kwon, editor
210   $aNew York $cNova Science Publishers$dc2011
215   $a1 online resource (262 p.)
225 1 $aElectrical engineering developments
300   $aDescription based upon print version of record.
311   $a1-61761-325-8 
320   $aIncludes bibliographical references and index.
410  0$aElectrical engineering developments series.
606   $aMetal oxide semiconductors, Complementary
608   $aElectronic books.
615  0$aMetal oxide semiconductors, Complementary.
676   $a621.39/5
701   $aKwon$b Min-jun$0909007
801  0$bMiAaPQ
801  1$bMiAaPQ
801  2$bMiAaPQ
906   $aBOOK
912   $a9910453045003321
996   $aCMOS technology$92033059
997   $aUNINA