LEADER 02496nam 2200601Ia 450 001 9910450185403321 005 20200520144314.0 010 $a1-281-88100-7 010 $a9786611881009 010 $a981-256-932-4 035 $a(CKB)1000000000247270 035 $a(EBL)259272 035 $a(OCoLC)475976090 035 $a(SSID)ssj0000246007 035 $a(PQKBManifestationID)11211425 035 $a(PQKBTitleCode)TC0000246007 035 $a(PQKBWorkID)10180422 035 $a(PQKB)10913190 035 $a(MiAaPQ)EBC259272 035 $a(WSP)00000725 035 $a(Au-PeEL)EBL259272 035 $a(CaPaEBR)ebr10126001 035 $a(CaONFJC)MIL188100 035 $a(OCoLC)935232562 035 $a(EXLCZ)991000000000247270 100 $a20050728d2005 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aSilicon RF power MOSFETS$b[electronic resource] /$fB. Jayant Baliga 210 $aSingapore ;$aHackensack, NJ $cWorld Scientific$dc2005 215 $a1 online resource (320 p.) 300 $aDescription based upon print version of record. 311 $a981-256-121-8 320 $aIncludes bibliographical references and index. 327 $aPreface; Contents; Chapter 1 Introduction; Chapter 2 RF Power Amplifiers; Chapter 3 MOSFET PHYSICS; Chapter 4 Lateral-Diffused MOSFETs; Chapter 5 Vertical-Diffused MOSFETs; Chapter 6 Charge-Coupled MOSFETs; Chapter 7 Super-Linear MOSFETs; Chapter 8 Planar Super-Linear MOSFETs; Chapter 9 Dual Trench MOSFETs; Chapter 10 Hot Carrier Injection Instability; Chapter 11 Synopsis; Appendix; Index 330 $aThe world-wide proliferation of cellular networks has revolutionizedtelecommunication systems. The transition from Analog to Digital RFtechnology enabled substantial increase in voice traffic usingavailable spectrum, and subsequently the delivery of digitally basedtext messaging, graphics and even streaming video. 606 $aMetal oxide semiconductor field-effect transistors 606 $aField-effect transistors 608 $aElectronic books. 615 0$aMetal oxide semiconductor field-effect transistors. 615 0$aField-effect transistors. 676 $a621.3815/284 700 $aBaliga$b B. Jayant$f1948-$07722 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910450185403321 996 $aSilicon RF power MOSFETS$92072993 997 $aUNINA