LEADER 03396nam 2200661Ia 450 001 9910450147803321 005 20200520144314.0 010 $a1-281-34762-0 010 $a9786611347628 010 $a981-256-236-2 035 $a(CKB)1000000000033287 035 $a(EBL)227133 035 $a(OCoLC)475932992 035 $a(SSID)ssj0000160686 035 $a(PQKBManifestationID)11183374 035 $a(PQKBTitleCode)TC0000160686 035 $a(PQKBWorkID)10190373 035 $a(PQKB)10394725 035 $a(MiAaPQ)EBC227133 035 $a(WSP)00005539 035 $a(Au-PeEL)EBL227133 035 $a(CaPaEBR)ebr10078535 035 $a(CaONFJC)MIL134762 035 $a(EXLCZ)991000000000033287 100 $a20040826d2004 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 00$aGaN-based materials and devices$b[electronic resource] $egrowth, fabrication, characterization and performance /$feditors, M.S. Shur, R.F. Davis 205 $a33th ed. 210 $aSingapore ;$aRiver Edge, N.J. $cWorld Scientific$dc2004 215 $a1 online resource (295 p.) 225 1 $aSelected topics in electronics and systems ;$vv. 33 300 $aDescription based upon print version of record. 311 $a981-238-844-3 320 $aIncludes bibliographical references. 327 $aPreface; CONTENTS; Materials Properties of Nitrides. Summary; Kinetics, Microstructure and Strain in GaN Thin Films Grown Via Pendeo-Epitaxy; Strain of GaN Layers Grown Using 6H-SiC(0001) Substrates with Different Buffer Layers; Growth of Thick GaN Films and Seeds for Bulk Crystal Growth; Cracking of GaN Films; Direct Bonding of GaN and SiC; A Novel Technique for Electronic Device Fabrication; Electronic Properties of GaN (0001) - Dielectronic Interfaces; Transport and Noise Properties; Quasi-Ballistic and Overshoot Transport in Group III-Nitrides; High Field Transport in AIN 327 $aGeneration-Recombination Noise in GaN-Based DevicesInsulated Gate III-N Heterostructure Field-Effect Transistors; High Voltage AIGaN/GaN Heterojunction Transistors; Etched Aperture GaN CAVET Through Photoelectrochemical Wet Etching; n-AlGaAs/p-GaAs/n-GaN Heterojunction Bipolar Transistor: The First Transistor Formed Via Wafer Fusion 330 $aThe unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising. 410 0$aSelected topics in electronics and systems ;$vv. 33. 606 $aGallium nitride 606 $aSemiconductors 608 $aElectronic books. 615 0$aGallium nitride. 615 0$aSemiconductors. 676 $a537.6223 676 $a621.38152 701 $aShur$b Michael$0770441 701 $aDavis$b Robert F$g(Robert Foster),$f1942-$020241 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910450147803321 996 $aGaN-based materials and devices$92028838 997 $aUNINA