LEADER 03888nam 2200637 a 450 001 9910438119203321 005 20200520144314.0 010 $a1-283-69755-6 010 $a3-642-31248-9 024 7 $a10.1007/978-3-642-31248-9 035 $a(CKB)2670000000279523 035 $a(EBL)994504 035 $a(OCoLC)813393252 035 $a(SSID)ssj0000790911 035 $a(PQKBManifestationID)11428980 035 $a(PQKBTitleCode)TC0000790911 035 $a(PQKBWorkID)10748254 035 $a(PQKB)10911692 035 $a(DE-He213)978-3-642-31248-9 035 $a(MiAaPQ)EBC994504 035 $a(PPN)16831892X 035 $a(EXLCZ)992670000000279523 100 $a20121024d2013 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aEffective electron mass in low-dimensional semiconductors /$fSitangshu Bhattacharya, Kamakhya Prasad Ghatak 205 $a1st ed. 2013. 210 $aBerlin $cSpringer$d2013 215 $a1 online resource (548 p.) 225 0$aSpringer series in materials science,$x0933-033X ;$vv. 167 300 $aDescription based upon print version of record. 311 $a3-642-43864-4 311 $a3-642-31247-0 320 $aIncludes bibliographical references and index. 327 $apt. I. Influence of quantum confinement on the effective electron mass (EEM) in non-parabolic semiconductors -- pt. II. Influence of light waves on the EEM in optoelectronic semiconductors -- pt. III. Influence of intense electric field on the EEM in optoelectronic semiconductors. 330 $aThis book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. The presence of intense electric field and the light waves change the band structure of optoelectronic semiconductors in fundamental ways, which have also been incorporated in the study of the EEM in quantized structures of optoelectronic compounds that control the studies of the quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under strong electric field and external photo excitation has also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the EEM and the EEM in heavily doped semiconductors and their nanostructures is discussed. This book contains 200 open research problems which form the integral part of the text and are useful for both Ph. D aspirants and researchers in the fields of solid-state sciences, materials science, nanoscience and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures. The book is written for post graduate students, researchers and engineers, professionals in the fields of solid state sciences, materials science, nanoscience and technology, nanostructured materials and condensed matter physics. 410 0$aSpringer Series in Materials Science,$x0933-033X ;$v167 606 $aLow-dimensional semiconductors 606 $aCompound semiconductors 606 $aOptoelectronics 615 0$aLow-dimensional semiconductors. 615 0$aCompound semiconductors. 615 0$aOptoelectronics. 676 $a508.1 700 $aBhattacharya$b Sitangshu$0524117 701 $aGhatak$b Kamakhya Prasad$0524116 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910438119203321 996 $aEffective electron mass in low-dimensional semiconductors$94187770 997 $aUNINA