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010   $a1-299-40843-5
010   $a3-642-35079-8
024 7 $a10.1007/978-3-642-35079-5
035   $a(CKB)2670000000337197
035   $a(EBL)1106310
035   $a(OCoLC)828794263
035   $a(SSID)ssj0000879858
035   $a(PQKBManifestationID)11956604
035   $a(PQKBTitleCode)TC0000879858
035   $a(PQKBWorkID)10854022
035   $a(PQKB)11684395
035   $a(DE-He213)978-3-642-35079-5
035   $a(MiAaPQ)EBC1106310
035   $a(PPN)16832797X
035   $a(EXLCZ)992670000000337197
100   $a20130315d2013      uy         0
101 0 $aeng
135   $aur|n|---|||||
181   $ctxt
182   $cc
183   $acr
200 10$aTransition-metal defects in Silicon $enew insights from photoluminescence studies of highly enriched 28-Si /$fMichael Steger
205   $a1st ed. 2013.
210   $aBerlin ;$aNew York $cSpringer$dc2013
215   $a1 online resource (107 p.)
225 0 $aSpringer theses
300   $aDescription based upon print version of record.
311   $a3-642-43808-3 
311   $a3-642-35078-X 
320   $aIncludes bibliographical references.
327   $aIntroduction and Background -- History of the Observed Centres in Silicon -- Experimental Method -- Results -- Discussion and Conclusion.
330   $aThe fundamental properties of deep luminescence centres in Si associated with transition metals such as Cu, Ag, Au, and Pt have been a focus of interest for decades, both as markers for these deleterious contaminants, and also in the quest for efficient Si-based light emission.   This dissertation presents the results of ultra-high resolution photoluminescence studies of these centres in specially prepared, highly enriched 28-Si samples. The greatly improved spectral resolution due to this enrichment led to the discovery of isotopic fingerprints. These fingerprints have revealed that the detailed constituents of all of the centres previously studied had been identified incorrectly. They also revealed the existence of several different families of impurity complexes containing either four or five atoms chosen from Li, Cu, Ag, Au, and Pt. These centres? constituents have been determined, together with no-phonon transition energies, no-phonon isotope shifts, local vibrational mode energies, and the isotope shifts of the local vibrational mode energies. The data presented here for these centres should prove useful for the currently sought theoretical explanations of their formation, stability, and properties.
410  0$aSpringer Theses, Recognizing Outstanding Ph.D. Research,$x2190-5053
606   $aSemiconductors$xDefects
606   $aSilicon
615  0$aSemiconductors$xDefects.
615  0$aSilicon.
676   $a537.6
676   $a537.6223
700   $aSteger$b Michael$0871945
801  0$bMiAaPQ
801  1$bMiAaPQ
801  2$bMiAaPQ
906   $aBOOK
912   $a9910437974703321
996   $aTransition-Metal Defects in Silicon$91946814
997   $aUNINA