LEADER 03724oam 2200493 450 001 9910437805603321 005 20190911103512.0 010 $a1-4614-8660-2 024 7 $a10.1007/978-1-4614-8660-2 035 $a(OCoLC)859396044 035 $a(MiFhGG)GVRL6XIB 035 $a(EXLCZ)993710000000019060 100 $a20130726d2013 uy 0 101 0 $aeng 135 $aurun|---uuuua 181 $ctxt 182 $cc 183 $acr 200 10$aHelium ion microscopy $eprinciples and applications /$fDavid C. Joy 205 $a1st ed. 2013. 210 1$aNew York :$cSpringer,$d2013. 215 $a1 online resource (viii, 64 pages) $cillustrations (some color) 225 1 $aSpringerBriefs in Materials,$x2192-1091 300 $a"ISSN: 2192-1091." 311 $a1-4614-8659-9 320 $aIncludes bibliographical references and index. 327 $aChapter 1: Introduction to Helium Ion Microscopy -- Chapter 2: Microscopy with Ions  - A brief history -- Chapter 3: Operating the Helium Ion Microscope -- Chapter 4: Ion ?Solid  Interactions  and Image Formation -- Chapter 5: Charging and  Damage -- Chapter 6: Microanalysis with the HIM -- Chapter 7: Ion Generated Damage -- Chapter 8: Working with other Ion beams -- Chapter 9: Patterning and Nanofabrication -- Conclusion -- Bibliography -- Appendix: iSE Yields,  and IONiSE  parameters for  He+ excitation  of Elements and Compounds -- Index. 330 $aHelium Ion Microscopy: Principles and Applications describes the theory and discusses the practical details of why scanning microscopes using beams of light ions ? such as the Helium Ion Microscope (HIM) ? are destined to become the imaging tools of choice for the 21st century. Topics covered include the principles, operation, and performance of the Gaseous Field Ion Source (GFIS), and a comparison of the optics of ion and electron beam microscopes including their operating conditions, resolution, and signal-to-noise performance. The physical principles of Ion-Induced Secondary Electron (iSE) generation by ions are discussed, and an extensive database of iSE yields for many elements and compounds as a function of incident ion species and its energy is included. Beam damage and charging are frequently outcomes of ion beam irradiation, and techniques to minimize such problems are presented. In addition to imaging, ions beams can be used for the controlled deposition, or removal, of selected materials with nanometer precision. The techniques and conditions required for nanofabrication are discussed and demonstrated. Finally, the problem of performing chemical microanalysis with ion beams is considered. Low energy ions cannot generate X-ray emissions, so alternative techniques such as Rutherford Backscatter Imaging (RBI) or Secondary Ion Mass Spectrometry (SIMS) are examined. Serves as a concise but authoritative introduction to the latest innovation in scanning microscopy Compares ion and electron beams as options for microscopy Presents a detailed physical model of ion-solid interactions and signal generation Provides a detailed database of iSE yield behavior as a function of the target ion, element, and energy. 410 0$aSpringerBriefs in materials. 606 $aField ion microscopy 606 $aHelium ions 606 $aIon bombardment 615 0$aField ion microscopy. 615 0$aHelium ions. 615 0$aIon bombardment. 676 $a578.1 676 $a620.11 700 $aJoy$b David C$4aut$4http://id.loc.gov/vocabulary/relators/aut$01064964 801 0$bMiFhGG 801 1$bMiFhGG 906 $aBOOK 912 $a9910437805603321 996 $aHelium Ion Microscopy$92541937 997 $aUNINA