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010   $a3-030-39655-X
024 7 $a10.1007/978-3-030-39655-8
035   $a(CKB)4100000010118262
035   $a(DE-He213)978-3-030-39655-8
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035   $a(PPN)242849059
035   $a(EXLCZ)994100000010118262
100   $a20200114d2020      u|         0
101 0 $aeng
135   $aurnn#008mamaa
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aVapor Crystal Growth and Characterization $eZnSe and Related II?VI Compound Semiconductors /$fby Ching-Hua Su
205   $a1st ed. 2020.
210  1$aCham :$cSpringer International Publishing :$cImprint: Springer,$d2020.
215   $a1 online resource (XVI, 215 p. 178 illus., 75 illus. in color.)
311 0 $a3-030-39654-1 
320   $aIncludes bibliographical references.
327   $aIntroduction -- Fundamentals of physical vapor transport process -- Vapor transport rate (Mass Flux) measurements and heat treatments -- Crystal growth -- Residual gas measurements and morphology characterization on grown crystals.
330   $aThe book describes developments in the crystal growth of bulk II-VI semiconductor materials. A fundamental, systematic, and in-depth study of the physical vapor transport (PVT) growth process is the key to producing high-quality single crystals of semiconductors. As such, the book offers a comprehensive overview of the extensive studies on ZnSe and related II-VI wide bandgap compound semiconductors, such as CdS, CdTe, ZnTe, ZnSeTe and ZnSeS. Further, it shows the detailed steps for the growth of bulk crystals enabling optical devices which can operate in the visible spectrum for applications such as blue light emitting diodes, lasers for optical displays and in the mid-IR wavelength range, high density recording, and military communications. The book then discusses the advantages of crystallization from vapor compared to the conventional melt growth: lower processing temperatures, the purification process associated with PVT, and the improved surface morphology of the grown crystals, as well as the necessary drawbacks to the PVT process, such as the low and inconsistent growth rates and the low yield of single crystals. By presenting in-situ measurements of transport rate, partial pressures and interferometry, as well as visual observations, the book provides detailed insights into in the kinetics during the PVT process. This book is intended for graduate students and professionals in materials science as well as engineers preparing and developing optical devices with semiconductors.
606   $aSemiconductors
606   $aMaterials science
606   $aMaterials
606   $aParticle acceleration
606   $aSemiconductors$3https://scigraph.springernature.com/ontologies/product-market-codes/P25150
606   $aCharacterization and Evaluation of Materials$3https://scigraph.springernature.com/ontologies/product-market-codes/Z17000
606   $aMaterials Engineering$3https://scigraph.springernature.com/ontologies/product-market-codes/T28000
606   $aParticle Acceleration and Detection, Beam Physics$3https://scigraph.springernature.com/ontologies/product-market-codes/P23037
615  0$aSemiconductors.
615  0$aMaterials science.
615  0$aMaterials.
615  0$aParticle acceleration.
615 14$aSemiconductors.
615 24$aCharacterization and Evaluation of Materials.
615 24$aMaterials Engineering.
615 24$aParticle Acceleration and Detection, Beam Physics.
676   $a548.5
700   $aSu$b Ching-Hua$4aut$4http://id.loc.gov/vocabulary/relators/aut$0845492
801  0$bMiAaPQ
801  1$bMiAaPQ
801  2$bMiAaPQ
906   $aBOOK
912   $a9910373957803321
996   $aVapor Crystal Growth and Characterization$91887562
997   $aUNINA