LEADER 04506nam 22005415 450 001 9910366590603321 005 20250605224854.0 010 $a3-030-20208-9 024 7 $a10.1007/978-3-030-20208-8 035 $a(CKB)4100000008870080 035 $a(MiAaPQ)EBC5845130 035 $a(DE-He213)978-3-030-20208-8 035 $a(EXLCZ)994100000008870080 100 $a20190801d2020 u| 0 101 0 $aeng 135 $aurcnu|||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aHigh-Frequency GaN Electronic Devices /$fedited by Patrick Fay, Debdeep Jena, Paul Maki 205 $a1st ed. 2020. 210 1$aCham :$cSpringer International Publishing :$cImprint: Springer,$d2020. 215 $a1 online resource (308 pages) 311 08$a3-030-20207-0 320 $aIncludes bibliographical references and index. 327 $aChapter 1. Introduction -- Chapter 2.High Power High Frequency Transistors: A Materials Perspective -- Chapter 3. Isotope Engineering of GaN for Boosting Transistor Speeds -- Chapter 4. Linearity Aspects of High Power Amplification in GaN Transistors -- Chapter 5. III-Nitride Tunneling Hot Electron Transfer Amplifier (THETA) -- Chapter 6.Plasma-Wave Propagation in GaN and Its Applications -- Chapter 7.Numerical Simulation of Distributed Electromagnetic and Plasma-wave Effect Devices -- Chapter 8.Resonant Tunneling Transport in Polar III-Nitride Heterostructures -- Chapter 9.Fabrication and Characterization of GaN/AlN Resonant Tunneling Diodes -- Chapter 10.Non-Contact Metrology for mm-wave and THz Electronics. 330 $aThis book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection are discussed in detail. In addition, advances in the underlying materials science that enable these demonstrations, and advancements in metrology that permit the accurate characterization and evaluation of these emerging device concepts are also included. Targeting readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications. Offers readers an integrated treatment of the state of the art in both conventional (i.e., HEMT) scaling as well as unconventional device architectures suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and widely-known experts in the field; Discusses both conventional scaled HEMTs (into the deep mm-wave) as well as unconventional approaches to address the mm-wave and THz regimes; Provides ?vertically integrated? coverage, including materials science that enables these recent advances, as well as device physics & design, and metrology techniques; Includes fundamental physics, as well as numerical simulations and experimental realizations. 606 $aElectronic circuits 606 $aElectronics 606 $aMicroelectronics 606 $aCircuits and Systems$3https://scigraph.springernature.com/ontologies/product-market-codes/T24068 606 $aElectronic Circuits and Devices$3https://scigraph.springernature.com/ontologies/product-market-codes/P31010 606 $aElectronics and Microelectronics, Instrumentation$3https://scigraph.springernature.com/ontologies/product-market-codes/T24027 615 0$aElectronic circuits. 615 0$aElectronics. 615 0$aMicroelectronics. 615 14$aCircuits and Systems. 615 24$aElectronic Circuits and Devices. 615 24$aElectronics and Microelectronics, Instrumentation. 676 $a621.3815 676 $a537.6223 702 $aFay$b Patrick$4edt$4http://id.loc.gov/vocabulary/relators/edt 702 $aJena$b Debdeep$4edt$4http://id.loc.gov/vocabulary/relators/edt 702 $aMaki$b Paul A.$f1956-$4edt$4http://id.loc.gov/vocabulary/relators/edt 906 $aBOOK 912 $a9910366590603321 996 $aHigh-Frequency GaN Electronic Devices$92507676 997 $aUNINA