LEADER 01531nam  2200337   450 
001 9910347938703321
005 20231209100029.0
010   $a1-5044-6119-3
024 7 $a10.1109/IEEESTD.2019.8886679
035   $a(CKB)4100000009750538
035   $a(NjHacI)994100000009750538
035   $a(EXLCZ)994100000009750538
100   $a20231209d2019      uy             0
101 0 $aeng
135   $aur|||||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aC62.59-2019 $eIEEE standard for test methods and preferred values for silicon PN-junction clamping diodes /$fInstitute of Electrical and Electronics Engineers
210  1$aNew York, New York :$cIEEE,$d2019.
215   $a1 online resource (41 pages)
330   $aSupersedes IEEE C62.35-2010 and IEEE C62.35-2010/Cor1-2018. The basic electrical parameters to be met by silicon PN junction voltage clamping components used for the protection of telecommunications equipment or lines from surges are defined in this standard. It is intended that this standard be used for the harmonization of existing or future specifications issued by PN diode surge protective component manufacturers, telecommunication equipment manufacturers, administrations, or network operators.
606   $aDiodes, Semiconductor
615  0$aDiodes, Semiconductor.
676   $a621.3815
801  0$bNjHacI
801  1$bNjHacl
906   $aDOCUMENT
912   $a9910347938703321
996   $aC62.59-2019$93648596
997   $aUNINA