LEADER 01733nam  2200397z- 450 
001 9910346908503321
005 20210211
010   $a1000021579
035   $a(CKB)4920000000101437
035   $a(oapen)https://directory.doabooks.org/handle/20.500.12854/40629
035   $a(oapen)doab40629
035   $a(EXLCZ)994920000000101437
100   $a20202102d2011      |y         0
101 0 $aeng
135   $aurmn|---annan
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 00$aAlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications
210   $cKIT Scientific Publishing$d2011
215   $a1 online resource (XI, 230 p. p.)
225 0 $aKarlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik.
311 08$a3-86644-615-2 
330   $aThis work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.
606   $aTechnology: general issues$2bicssc
610   $aAlGaN/GaN HEMT
610   $aMMIC design
610   $apower amplifier
610   $apower-added efficiency
610   $aX-band
615  7$aTechnology: general issues
700   $aKühn$b Jutta$01318410
906   $aBOOK
912   $a9910346908503321
996   $aAlGaN$93033210
997   $aUNINA