LEADER 02092nam 2200409 450 001 996280643503316 005 20231206194535.0 010 $a0-7381-5434-2 035 $a(CKB)2670000000414657 035 $a(NjHacI)992670000000414657 035 $a(EXLCZ)992670000000414657 100 $a20231206d2008 uy 0 101 0 $aeng 135 $aur||||||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aIEEE Standard for Practices and Requirements for Semiconductor Power Rectifier Transformers Amendment 1 $eAdded Technical and Editorial Corrections /$fInstitute of Electrical and Electronics Engineers 210 1$aNew York :$cIEEE,$d2008. 215 $a1 online resource (viii, 61 pages) $cillustrations 311 $a0-7381-5435-0 330 $aThis standard practice provides rating data, construction requirements, testing and calculation methods for dry-type or liquid-filled semiconductor power rectifier transformers. These transformers supply nonsinusoidal load currents and are subject to higher harmonic load losses than standard power transformers. 517 $aC57.18.10a-2008 - IEEE Standard for Practices and Requirements for Semiconductor Power Rectifier Transformers Amendment 1 517 $aIEEE Std C57.18.10a-2008 (Amendment to IEEE Std C57.18.10-1998): IEEE Standard for Practices and Requirements for Semiconductor Power Rectifier Transformers Amendment 1: Added Technical and Editorial Corrections 517 $aIEEE Std C57.18.10a-2008 517 $aIEEE Standard for Practices and Requirements for Semiconductor Power Rectifier Transformers Amendment 1 606 $aElectric current rectifiers 606 $aSemiconductor rectifiers 615 0$aElectric current rectifiers. 615 0$aSemiconductor rectifiers. 676 $a621.381 801 0$bNjHacI 801 1$bNjHacl 906 $aDOCUMENT 912 $a996280643503316 996 $aIEEE Standard for Practices and Requirements for Semiconductor Power Rectifier Transformers Amendment 1$93646395 997 $aUNISA LEADER 01644nam 2200385z- 450 001 9910346887703321 005 20210211 010 $a1000032483 035 $a(CKB)4920000000101645 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/54280 035 $a(oapen)doab54280 035 $a(EXLCZ)994920000000101645 100 $a20202102d2013 |y 0 101 0 $aeng 135 $aurmn|---annan 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 00$aNanoscale investigation of potential distribution in operating Cu(In,Ga)Se2 thin-film solar cells 210 $cKIT Scientific Publishing$d2013 215 $a1 online resource (VII, 170 p. p.) 311 08$a3-86644-978-X 330 $aThe distribution of the electrostatic potential in and between the materials in Cu(In,Ga)Se2 thin-film solar cells has a major impact on their superior performance. This thesis reported on the nanoscale imaging of the electrostatic potential on untreated cross sections of operating Cu(In,Ga)Se2 solar cells using Kelvin probe force microscopy. 517 $aNanoscale investigation of potential distribution in operating Cu 606 $aTechnology: general issues$2bicssc 610 $aCIGS 610 $aelectrostatic potential distribution 610 $aKPFM 610 $athin-film solar cell 615 7$aTechnology: general issues 700 $aZhang$b Zhenhao$4auth$01327804 906 $aBOOK 912 $a9910346887703321 996 $aNanoscale investigation of potential distribution in operating Cu(In,Ga)Se2 thin-film solar cells$93038120 997 $aUNINA