LEADER 03744nam 22009373a 450 001 9910346839003321 005 20250203235429.0 010 $a9783038979777 010 $a3038979775 024 8 $a10.3390/books978-3-03897-977-7 035 $a(CKB)4920000000095250 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/57740 035 $a(ScCtBLL)93abc465-b531-42d5-bbd1-8c1ffeffde9b 035 $a(OCoLC)1163835782 035 $a(oapen)doab57740 035 $a(EXLCZ)994920000000095250 100 $a20250203i20192019 uu 101 0 $aeng 135 $aurmn|---annan 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 00$aRecent Advances in Novel Materials for Future Spintronics$fRabah Khenata, Xiaotian Wang, Hong Chen 210 $cMDPI - Multidisciplinary Digital Publishing Institute$d2019 210 1$aBasel, Switzerland :$cMDPI,$d2019. 215 $a1 electronic resource (152 p.) 311 08$a9783038979760 311 08$a3038979767 330 $aAs we all know, electrons carry both charge and spin. The processing of information in conventional electronic devices is based only on the charge of electrons. Spin electronics, or spintronics, uses the spin of electrons, as well as their charge, to process information. Metals, semiconductors, and insulators are the basic materials that constitute the components of electronic devices, and these types of materials have been transforming all aspects of society for over a century. In contrast, magnetic metals, half-metals (including zero-gap half-metals), magnetic semiconductors (including spin-gapless semiconductors), dilute magnetic semiconductors, and magnetic insulators are the materials that will form the basis for spintronic devices. This book aims to collect a range of papers on novel materials that have intriguing physical properties and numerous potential practical applications in spintronics. 606 $aChemistry$2bicssc 610 $adoping 610 $aspin polarization 610 $afirst-principle 610 $aquaternary Heusler alloy 610 $aelectronic structure 610 $aPrussian blue analogue 610 $afirst-principles calculations 610 $afirst-principles calculation 610 $amagnetic anisotropy 610 $apressure 610 $aNb (100) surface 610 $aDzyaloshinskii-Moriya interaction 610 $aoptical properties 610 $askyrmion 610 $aequiatomic quaternary Heusler compounds 610 $aHeusler alloy 610 $ainterface structure 610 $afirst principles 610 $amagnetism 610 $aspin transport 610 $afirst-principles method 610 $amonolayer CrSi2 610 $ahalf-metallic material 610 $aH adsorption 610 $ahalf-metallic materials 610 $alattice dynamics 610 $aspin gapless semiconductor 610 $afirst-principle calculations 610 $ahalf-metallicity 610 $abulk CrSi2 610 $acovalent hybridization 610 $aH diffusion 610 $aelectronic property 610 $aMgBi2O6 610 $aphysical nature 610 $aMo doping 610 $aphase stability 610 $amechanical anisotropy 610 $aquaternary Heusler compound 610 $amagnetic properties 610 $aexchange energy 615 7$aChemistry 700 $aKhenata$b Rabah$01788192 702 $aWang$b Xiaotian 702 $aChen$b Hong 801 0$bScCtBLL 801 1$bScCtBLL 906 $aBOOK 912 $a9910346839003321 996 $aRecent Advances in Novel Materials for Future Spintronics$94322703 997 $aUNINA