LEADER 01152nam a2200289 i 4500 001 991002163139707536 005 20020508191537.0 008 980421s1978 ||| ||| | eng 035 $ab10968568-39ule_inst 035 $aPARLA156476$9ExL 040 $aDip.to Filol. Class. e di Scienze Filosofiche$bita 082 0 $a001.5520938 100 1 $aKenyon, Frederic George$0538358 245 10$aBooks and readers in ancient Greece and Rome /$cby Frederic G. Kenyon 250 $a2. ed. 260 $a[s.l.] :$bThe Arden Library,$c1978 300 $a136 p. :$bill. ;$c19 cm. 500 $aCopia anastatica dell'ed.: Oxford : Clarendon, 1951. 650 4$aLibri$xStoria 650 4$aManoscritti (Papiri) 907 $a.b10968568$b07-10-13$c28-06-02 912 $a991002163139707536 945 $aLE007 F 4100$g1$i2007000055748$lle007$o-$pE0.00$q-$rl$s- $t0$u0$v0$w0$x0$y.i11078923$z28-06-02 945 $aLE015 930 - 97$g1$i2015000015020$lle007$o-$pE0.00$q-$rl$s- $t0$u0$v0$w0$x0$y.i11078935$z28-06-02 996 $aBooks and readers in ancient Greece and Rome$9863521 997 $aUNISALENTO 998 $ale007$b01-01-98$cm$da $e-$feng$gxx $h0$i2 LEADER 05968nam 22015733a 450 001 9910346664303321 005 20250203235426.0 010 $a9783039212262 010 $a3039212265 024 8 $a10.3390/books978-3-03921-226-2 035 $a(CKB)4920000000095024 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/54256 035 $a(ScCtBLL)e78a0579-9db2-4147-b563-757ec6efa22f 035 $a(OCoLC)1126193075 035 $a(oapen)doab54256 035 $a(EXLCZ)994920000000095024 100 $a20250203i20192019 uu 101 0 $aeng 135 $aurmn|---annan 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 00$aNanoelectronic Materials, Devices and Modeling$fQiliang Li, Hao Zhu 210 $cMDPI - Multidisciplinary Digital Publishing Institute$d2019 210 1$aBasel, Switzerland :$cMDPI,$d2019. 215 $a1 electronic resource (242 p.) 311 08$a9783039212255 311 08$a3039212257 330 $aAs CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry. 606 $aHistory of engineering and technology$2bicssc 610 $aquantum mechanical 610 $aneuromorphic computation 610 $aoff-current (Ioff) 610 $adouble-gate tunnel field-effect-transistor 610 $atopological insulator 610 $aback current blocking layer (BCBL) 610 $aCMOS power amplifier IC 610 $ainformation integration 610 $adistributed Bragg 610 $aspike-timing-dependent plasticity 610 $aelectron affinity 610 $aenhancement-mode 610 $acurrent collapse 610 $agallium nitride (GaN) 610 $aband-to-band tunneling 610 $avertical field-effect transistor (VFET) 610 $aionic liquid 610 $aluminescent centres 610 $athermal coupling 610 $avision localization 610 $aPC1D 610 $aUAV 610 $aZnO/Si 610 $adual-switching transistor 610 $amemristor 610 $afield-effect transistor 610 $ahigher order synchronization 610 $ashallow trench isolation (STI) 610 $amemristive device 610 $aon-current (Ion) 610 $alow voltage 610 $areflection transmision method 610 $adielectric layer 610 $asource/drain (S/D) 610 $ahigh efficiency 610 $ananostructure synthesis 610 $aInAlN/GaN heterostructure 610 $asupercapacitor 610 $ahigh-electron mobility transistor (HEMTs) 610 $aheterojunction 610 $ap-GaN 610 $arecessed channel array transistor (RCAT) 610 $agate field effect 610 $acharge injection 610 $asaddle FinFET (S-FinFET) 610 $aL-shaped tunnel field-effect-transistor 610 $aconductivity 610 $aenergy storage 610 $ahierarchical 610 $aPECVD 610 $asample grating 610 $aMISHEMT 610 $abistability 610 $athreshold voltage (VTH) 610 $abandgap tuning 610 $aoscillatory neural networks 610 $aUV irradiation 610 $aMott transition 610 $athird harmonic tuning 610 $atopological magnetoelectric effect 610 $across-gain modulation 610 $a2D material 610 $asolar cells 610 $asilicon on insulator (SOI) 610 $aGreen's function 610 $aoptoelectronic devices 610 $asemiconductor optical amplifier 610 $aZnO films 610 $agraphene 610 $aAlGaN/GaN 610 $apolarization effect 610 $atwo-photon process 610 $aconductive atomic force microscopy (cAFM) 610 $a2DEG density 610 $avanadium dioxide 610 $ainterface traps 610 $apotential drop width (PDW) 610 $apattern recognition 610 $adrain-induced barrier lowering (DIBL) 610 $aatomic layer deposition (ALD) 610 $anormally off power devices 610 $agate-induced drain leakage (GIDL) 610 $ainsulator-metal transition (IMT) 610 $azinc oxide 610 $asynaptic device 610 $asubthreshold slope (SS) 610 $alanding 610 $asilicon 610 $acorner-effect 610 $aconditioned reflex 610 $aquantum dot 610 $agallium nitride 610 $abismuth ions 610 $aconduction band offset 610 $avariational form 615 7$aHistory of engineering and technology 700 $aLi$b Qiliang$01328703 702 $aZhu$b Hao 801 0$bScCtBLL 801 1$bScCtBLL 906 $aBOOK 912 $a9910346664303321 996 $aNanoelectronic Materials, Devices and Modeling$93038849 997 $aUNINA