LEADER 03481nam  22005295  450 
001 9910337653803321
005 20200701071759.0
010   $a3-030-04513-7
024 7 $a10.1007/978-3-030-04513-5
035   $a(CKB)4100000007204757
035   $a(MiAaPQ)EBC5614872
035   $a(DE-He213)978-3-030-04513-5
035   $a(PPN)232967199
035   $a(EXLCZ)994100000007204757
100   $a20181213d2019      u|         0
101 0 $aeng
135   $aurcnu||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aDevice Physics, Modeling, Technology, and Analysis for Silicon MESFET /$fby Iraj Sadegh Amiri, Hossein Mohammadi, Mahdiar Hosseinghadiry
205   $a1st ed. 2019.
210  1$aCham :$cSpringer International Publishing :$cImprint: Springer,$d2019.
215   $a1 online resource (125 pages)
311   $a3-030-04512-9 
327   $aChapter 1. Invention and Evaluation of Transistors and Integrated Circuits -- Chapter 2. General overview of the basic structure and operation of a typical silicon on insulator metal-semiconductor field effect transistor SOI-MESFET  -- Chapter 3. Modeling of Classical SOI-MESFET -- Chapter 4. Design and modeling of triple-material gate SOI-MESFET -- Chapter 5. Three-dimensional analytical model of the non-classical three-gate SOI-MESFET  -- Chapter 6. Analytical investigation of subthreshold performance of SOI-MESFET devices -- Chapter 7. Future works on Silicon-on-insulator metal semiconductor field effect transistors (SOI-MESFETs).
330   $aThis book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications. Describes the evolution of MESFET in the semiconductor industry; Discusses challenges and solutions associated with downscaling; Provides comprehensive information on the structure and operation of silicon MESFETs.
606   $aElectronic circuits
606   $aElectronics
606   $aMicroelectronics
606   $aCircuits and Systems$3https://scigraph.springernature.com/ontologies/product-market-codes/T24068
606   $aElectronic Circuits and Devices$3https://scigraph.springernature.com/ontologies/product-market-codes/P31010
606   $aElectronics and Microelectronics, Instrumentation$3https://scigraph.springernature.com/ontologies/product-market-codes/T24027
615  0$aElectronic circuits.
615  0$aElectronics.
615  0$aMicroelectronics.
615 14$aCircuits and Systems.
615 24$aElectronic Circuits and Devices.
615 24$aElectronics and Microelectronics, Instrumentation.
676   $a621.3815284
700   $aAmiri$b Iraj Sadegh$4aut$4http://id.loc.gov/vocabulary/relators/aut$0720753
702   $aMohammadi$b Hossein$4aut$4http://id.loc.gov/vocabulary/relators/aut
702   $aHosseinghadiry$b Mahdiar$4aut$4http://id.loc.gov/vocabulary/relators/aut
906   $aBOOK
912   $a9910337653803321
996   $aDevice Physics, Modeling, Technology, and Analysis for Silicon MESFET$92294622
997   $aUNINA